JPS5772381A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5772381A JPS5772381A JP14971180A JP14971180A JPS5772381A JP S5772381 A JPS5772381 A JP S5772381A JP 14971180 A JP14971180 A JP 14971180A JP 14971180 A JP14971180 A JP 14971180A JP S5772381 A JPS5772381 A JP S5772381A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- opening
- conductor
- resistance value
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To change resistance value, and to set the gate delay time of a MOS type transistor accurately by forming a plurality of openings to an insulating film of an upper surface of a resistor having resistance value higher than the optimum resistance value and selecting an opening of a mask pattern for the openings. CONSTITUTION:A gate 21 made of the resistor in polycrystal silicon, etc. is formed in a shape that one end is extended. The insulating film in silicon dioxide, etc. is shaped onto an upper surface of the gate 21, the opening for conduction is formed to the insulating film, and a conductor 27 is molded so as to approximately cover an extending section of the gate 21. In this case, since the opening 26 is formed to the conductor 27 and the conductor is conducted with the gate 21, signals effectively applied to the gate 21 are signals that gate resistance value up to the one end 28 of the extending section of the gate from the opening 26 is added to signals inputted to the conductor 27. Here, since capacity value is constant, the delay time can be altered properly by changing a position of the opening 26.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971180A JPS5772381A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971180A JPS5772381A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772381A true JPS5772381A (en) | 1982-05-06 |
Family
ID=15481145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14971180A Pending JPS5772381A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772381A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58173602U (en) * | 1982-05-17 | 1983-11-19 | 紀伊産業株式会社 | Inlet structure of simple garbage container |
-
1980
- 1980-10-24 JP JP14971180A patent/JPS5772381A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58173602U (en) * | 1982-05-17 | 1983-11-19 | 紀伊産業株式会社 | Inlet structure of simple garbage container |
JPS634001Y2 (en) * | 1982-05-17 | 1988-02-01 |
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