JPS5772381A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5772381A
JPS5772381A JP14971180A JP14971180A JPS5772381A JP S5772381 A JPS5772381 A JP S5772381A JP 14971180 A JP14971180 A JP 14971180A JP 14971180 A JP14971180 A JP 14971180A JP S5772381 A JPS5772381 A JP S5772381A
Authority
JP
Japan
Prior art keywords
gate
opening
conductor
resistance value
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14971180A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Kazuhiro Murase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14971180A priority Critical patent/JPS5772381A/en
Publication of JPS5772381A publication Critical patent/JPS5772381A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To change resistance value, and to set the gate delay time of a MOS type transistor accurately by forming a plurality of openings to an insulating film of an upper surface of a resistor having resistance value higher than the optimum resistance value and selecting an opening of a mask pattern for the openings. CONSTITUTION:A gate 21 made of the resistor in polycrystal silicon, etc. is formed in a shape that one end is extended. The insulating film in silicon dioxide, etc. is shaped onto an upper surface of the gate 21, the opening for conduction is formed to the insulating film, and a conductor 27 is molded so as to approximately cover an extending section of the gate 21. In this case, since the opening 26 is formed to the conductor 27 and the conductor is conducted with the gate 21, signals effectively applied to the gate 21 are signals that gate resistance value up to the one end 28 of the extending section of the gate from the opening 26 is added to signals inputted to the conductor 27. Here, since capacity value is constant, the delay time can be altered properly by changing a position of the opening 26.
JP14971180A 1980-10-24 1980-10-24 Semiconductor integrated circuit Pending JPS5772381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14971180A JPS5772381A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14971180A JPS5772381A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5772381A true JPS5772381A (en) 1982-05-06

Family

ID=15481145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14971180A Pending JPS5772381A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5772381A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173602U (en) * 1982-05-17 1983-11-19 紀伊産業株式会社 Inlet structure of simple garbage container

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173602U (en) * 1982-05-17 1983-11-19 紀伊産業株式会社 Inlet structure of simple garbage container
JPS634001Y2 (en) * 1982-05-17 1988-02-01

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