JPS5772354A - Package for semiconductor device - Google Patents
Package for semiconductor deviceInfo
- Publication number
- JPS5772354A JPS5772354A JP14899080A JP14899080A JPS5772354A JP S5772354 A JPS5772354 A JP S5772354A JP 14899080 A JP14899080 A JP 14899080A JP 14899080 A JP14899080 A JP 14899080A JP S5772354 A JPS5772354 A JP S5772354A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- mount
- package
- nearly
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
PURPOSE:To make is possible to easily weld a cap and a mount of a package at a relatively-low temperature by adhering a metal layer made by implanting an element for lowering its melting point into Ni as a metal layer for welding to the cap and mount. CONSTITUTION:Welding parts A and B of a package mount 2 and a cap 5 are immersed into an electroless plating solution including NiCl2NaPH2O1 and C2H3O3Na at the temperature of nearly 90 deg.C for 30min, thereby constituting an electroless Ni plating layer including P by nearly 10% on the welding parts of cap 5 and mount 2. Thus, the melting point of Ni implating P decreases down to nearly 880 deg.C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14899080A JPS5772354A (en) | 1980-10-24 | 1980-10-24 | Package for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14899080A JPS5772354A (en) | 1980-10-24 | 1980-10-24 | Package for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772354A true JPS5772354A (en) | 1982-05-06 |
Family
ID=15465228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14899080A Pending JPS5772354A (en) | 1980-10-24 | 1980-10-24 | Package for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772354A (en) |
-
1980
- 1980-10-24 JP JP14899080A patent/JPS5772354A/en active Pending
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