JPS5771174A - Solid state image pick-up device - Google Patents

Solid state image pick-up device

Info

Publication number
JPS5771174A
JPS5771174A JP55148637A JP14863780A JPS5771174A JP S5771174 A JPS5771174 A JP S5771174A JP 55148637 A JP55148637 A JP 55148637A JP 14863780 A JP14863780 A JP 14863780A JP S5771174 A JPS5771174 A JP S5771174A
Authority
JP
Japan
Prior art keywords
substrate
transfer elements
elements
signal processing
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148637A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258553B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Takigawa
Shigeki Hamashima
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55148637A priority Critical patent/JPS5771174A/ja
Publication of JPS5771174A publication Critical patent/JPS5771174A/ja
Publication of JPS6258553B2 publication Critical patent/JPS6258553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55148637A 1980-10-22 1980-10-22 Solid state image pick-up device Granted JPS5771174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148637A JPS5771174A (en) 1980-10-22 1980-10-22 Solid state image pick-up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148637A JPS5771174A (en) 1980-10-22 1980-10-22 Solid state image pick-up device

Publications (2)

Publication Number Publication Date
JPS5771174A true JPS5771174A (en) 1982-05-01
JPS6258553B2 JPS6258553B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=15457240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148637A Granted JPS5771174A (en) 1980-10-22 1980-10-22 Solid state image pick-up device

Country Status (1)

Country Link
JP (1) JPS5771174A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074879A (ja) * 1983-09-30 1985-04-27 Olympus Optical Co Ltd 固体撮像装置
FR2693033A1 (fr) * 1992-06-30 1993-12-31 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
JPH0618511U (ja) * 1992-07-16 1994-03-11 日本スピンドル製造株式会社 パーテーション
FR2806835A1 (fr) * 2000-02-10 2001-09-28 Raytheon Co Systeme de capteur/support destine notamment a la detection d'un rayonnement
JP2014007201A (ja) * 2012-06-21 2014-01-16 Fujitsu Ltd 赤外線検知素子の製造方法、および赤外線検知素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074879A (ja) * 1983-09-30 1985-04-27 Olympus Optical Co Ltd 固体撮像装置
FR2693033A1 (fr) * 1992-06-30 1993-12-31 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
JPH0618511U (ja) * 1992-07-16 1994-03-11 日本スピンドル製造株式会社 パーテーション
FR2806835A1 (fr) * 2000-02-10 2001-09-28 Raytheon Co Systeme de capteur/support destine notamment a la detection d'un rayonnement
JP2014007201A (ja) * 2012-06-21 2014-01-16 Fujitsu Ltd 赤外線検知素子の製造方法、および赤外線検知素子

Also Published As

Publication number Publication date
JPS6258553B2 (enrdf_load_stackoverflow) 1987-12-07

Similar Documents

Publication Publication Date Title
US5272113A (en) Method for minimizing stress between semiconductor chips having a coefficient of thermal expansion different from that of a mounting substrate
US4206470A (en) Thin film interconnect for multicolor IR/CCD
EP0122121A3 (en) Improved substrateless thermoelectric device and method of making same
MY117089A (en) Photo sensor and method for forming the same
FR2491259B1 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP0908956A3 (en) Photoelectric conversion apparatus and image sensor
JPS5771174A (en) Solid state image pick-up device
GB1208382A (en) Improvements relating to semiconductor strain transducers
EP0509732A3 (en) Semiconductor device attached on a substrate
JPS57100761A (en) Semiconductor light sensitive device
FR2443746A1 (fr) Dispositif photovoltaique, notamment pile solaire
EP0302526A3 (en) Image forming method and recording medium
US4137625A (en) Thin film interconnect for multicolor IR/CCD
JPS561318A (en) Photoelectric conversion device
JPS54102990A (en) Optical sensor array and its manufacture
SE9700215D0 (sv) A method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer
EP0075924A3 (en) Solid state image pick-up device having a high resolution and a high sensitivity
JPS55150279A (en) Infrared ray camera device
JPS5568684A (en) Infrared ray camera
JPS57204115A (en) Manufacture of semiconductor device
JPS5478095A (en) Semiconductor displacement converter
JPS577979A (en) Solid-state image picking up device
JPS5336180A (en) Production of semiconductor device
EP0201916A3 (en) Bonding method of semiconductor device
JPS6412561A (en) Application of heat transfer compound