JPS5771174A - Solid state image pick-up device - Google Patents
Solid state image pick-up deviceInfo
- Publication number
- JPS5771174A JPS5771174A JP55148637A JP14863780A JPS5771174A JP S5771174 A JPS5771174 A JP S5771174A JP 55148637 A JP55148637 A JP 55148637A JP 14863780 A JP14863780 A JP 14863780A JP S5771174 A JPS5771174 A JP S5771174A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transfer elements
- elements
- signal processing
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 12
- 239000004065 semiconductor Substances 0.000 abstract 4
- 229910002665 PbTe Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000008602 contraction Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To avoid the deterioration in the connection sections of transfer elements by a method wherein a second semiconductor substrate is split when a solid state image pick-up element is composed by a first semiconductor substrate providing light sensitive arrays and the second semiconductor substrate consisting of a different substance providing with charge transfer elements for signal processing and transfer elements are provided at each second semiconductor substrate. CONSTITUTION:A PbSnTe layer 1' is epitaxially grown under the surface of a substrate 1 consisting of PbTe and the like, and a plurality of light sensitive elements 2 are arranged under the layer 1' in matrix shape. And an Si substrate 3 facing to elements 2 is split to form a plurality of substrates 3' and charge transfer elements for signal processing are forming at each substrate 3' through SiO2 films 5 and the charge transfer elements for signal processing are connected to light sensitive elements 2 facing to the charge transfer elements for signal processing by bonding pads 4 and metal bumps 6 using In and the like. After that, a substrate 11 of one sheet configuration consisting of the same PbTe as the substrate 1 is fixed to the reverse sides of the substrates 3' while contacting each convex section 11' provided on the surface of the substrate 11. In this way, the bumps 6 will not be disconnected even if expansion and contraction are generated by thermal history at the time of operation and non-operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148637A JPS5771174A (en) | 1980-10-22 | 1980-10-22 | Solid state image pick-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148637A JPS5771174A (en) | 1980-10-22 | 1980-10-22 | Solid state image pick-up device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5771174A true JPS5771174A (en) | 1982-05-01 |
| JPS6258553B2 JPS6258553B2 (en) | 1987-12-07 |
Family
ID=15457240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55148637A Granted JPS5771174A (en) | 1980-10-22 | 1980-10-22 | Solid state image pick-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771174A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074879A (en) * | 1983-09-30 | 1985-04-27 | Olympus Optical Co Ltd | Solid-state image pickup device |
| FR2693033A1 (en) * | 1992-06-30 | 1993-12-31 | Commissariat Energie Atomique | Large imaging device. |
| JPH0618511U (en) * | 1992-07-16 | 1994-03-11 | 日本スピンドル製造株式会社 | Partition |
| FR2806835A1 (en) * | 2000-02-10 | 2001-09-28 | Raytheon Co | Sensor/support structure for the detection of radiation incorporating a strut of a different material to those of the sensor, the reading circuit and the support platform to reduce thermal dilation effects |
| JP2014007201A (en) * | 2012-06-21 | 2014-01-16 | Fujitsu Ltd | Method of manufacturing infrared detection element, and infrared detection element |
-
1980
- 1980-10-22 JP JP55148637A patent/JPS5771174A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074879A (en) * | 1983-09-30 | 1985-04-27 | Olympus Optical Co Ltd | Solid-state image pickup device |
| FR2693033A1 (en) * | 1992-06-30 | 1993-12-31 | Commissariat Energie Atomique | Large imaging device. |
| JPH0618511U (en) * | 1992-07-16 | 1994-03-11 | 日本スピンドル製造株式会社 | Partition |
| FR2806835A1 (en) * | 2000-02-10 | 2001-09-28 | Raytheon Co | Sensor/support structure for the detection of radiation incorporating a strut of a different material to those of the sensor, the reading circuit and the support platform to reduce thermal dilation effects |
| JP2014007201A (en) * | 2012-06-21 | 2014-01-16 | Fujitsu Ltd | Method of manufacturing infrared detection element, and infrared detection element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258553B2 (en) | 1987-12-07 |
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