JP2014007201A - Method of manufacturing infrared detection element, and infrared detection element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an infrared detection element, more particularly, to provide a technology for bonding between a sensor substrate configuring the infrared detection element and a circuit board.SOLUTION: A method of manufacturing an infrared detection element includes: a first bonding step of bonding at an ambient temperature a wiring board consisting of a first material and on which a wiring pattern is formed with a drive circuit board consisting of a second material and on which a plurality of drive circuits for reading signals from pixels detecting infrared are formed; an individualization step of individualizing the drive circuit board bonded with the wiring board; and a second bonding step of heating and bonding at a predetermined temperature the individualized drive circuit board and a sensor substrate consisting of the first material and on which the pixels detecting infrared are arranged.

Description

  The present invention relates to an infrared detection element, and more particularly to a technique for joining a sensor substrate and a circuit board constituting the infrared detection element.

  There is known an infrared detecting element that absorbs received middle / far infrared rays and detects infrared rays by a current flowing at this time. The infrared detecting element detects infrared rays using an energy difference between quantized levels in the infrared region, and a compound semiconductor such as GaAs is used. The reason why GaAs is used is that it is difficult to change the band gap while making lattice matching in Si forming a general semiconductor circuit element. On the other hand, with GaAs or the like, it is difficult to form FETs and capacitors because a stable oxide film cannot be obtained. For this reason, an infrared sensor (hereinafter also referred to simply as a sensor) that detects received infrared light is formed of a substrate such as GaAs (herein referred to as a sensor substrate), and an output voltage corresponding to the amount of current flowing through the sensor. A readout circuit (ROIC: ReadOut Integrated Circuit) for reading out is generally formed of a Si substrate (here, the substrate on which the readout circuit is formed is referred to as a circuit substrate). Both the sensor substrate and the circuit substrate are bonded via bumps, and In is generally used as the bump material. The reason why In is used is that, when high pressure is applied to GaAs, crystal dislocation occurs, so that In can be bonded at a low pressure, and since the In material is soft, the difference in thermal expansion coefficient during cooling can be absorbed. by.

  A quantum well type (QWIP) or quantum dot type (QDIP) infrared sensor forms a sensor array in which a plurality of pixels are two-dimensionally arranged. In recent years, there has been an increasing demand for higher resolution of infrared detection elements, and an increase in the number of pixels inevitably increases the area of the light receiving portion of the sensor. That is, the sensor substrate on which the sensor array is formed is getting larger.

Leonard Chen et al., “Overview of advances in high performance ROIC designs for use with IRFPAs”, Proceeding of SPIE, Vol. 4028 (2000), pp.124-138

  As described above, the infrared detection element has a structure in which a sensor substrate that detects infrared rays and a circuit substrate that reads an output voltage from the sensor are bonded together by bonding of bumps. In bonding the bumps, the bumps on the sensor board and circuit board are aligned and pressed and pressed, and then the In bumps are integrated by heating, but the sensor board is enlarged (the circuit board is also enlarged at the same time). As a result, the bumps are displaced when the two substrates are bonded. That is, since the thermal expansion coefficients of GaAs of the sensor substrate and Si of the circuit substrate are greatly different, the bump position shifts in a region around the substrate with an increase in size of the substrate. This bump misalignment may cause a short circuit between adjacent bumps.

  In view of the above problems, an object of the present invention is to provide an infrared detection element manufacturing method and an infrared detection element having a structure in which bump displacement does not occur between a sensor substrate and a circuit board in bonding of bumps with heating. To do.

  According to one aspect of the invention, a wiring board made of a first material on which a wiring pattern is formed, and a driving circuit board made of a second material on which a plurality of driving circuits for reading signals from pixels that detect infrared rays are formed. A first bonding step for bonding at room temperature, an individualization step for dividing the drive circuit board bonded to the wiring board, an individual drive circuit board, and an infrared ray made of the first material. And a second bonding step in which the sensor substrate on which the pixels to be arranged are heated and bonded to each other at a predetermined temperature is provided.

  According to the disclosed infrared detection element, even when heated at the time of bump bonding, the wiring board thermally expands in the same manner as the sensor board, and the positional deviation between the separated circuit board and the sensor board on the wiring board does not occur.

It is a figure which shows the joining example of a general infrared rays detection element. It is a figure which shows the short example of the adjacent bump accompanying board | substrate size enlargement. It is a figure which shows the read-out circuit example of an infrared detection element. It is a figure which shows the example of a partial structure of the infrared rays detection element by this invention. It is a figure which shows the manufacture flow example (the 1) of a photosensitive element board | substrate. It is a figure which shows the example (2) of preparation flows of a sensor board | substrate. It is a figure which shows the example (1) of preparation flows of an infrared detection element. It is a figure which shows the preparation flow (the 2) of an infrared rays detection element. It is a figure which shows the preparation flow (the 3) of an infrared rays detection element. It is a figure which shows the example of whole structure of an infrared rays detection element.

  In order to facilitate understanding of the embodiment of the present invention, a general example of joining infrared detection elements and a short example of adjacent bumps accompanying an increase in size of a sensor substrate will be described.

  FIG. 1A is a diagram schematically showing a state in which a sensor substrate 20 and a circuit substrate 30 are joined in a general infrared detection element 10. The sensor substrate 20 is made of GaAs, and includes a substrate portion 21 that receives infrared rays, an infrared photosensitive portion 22 that detects the incident amount of received infrared rays, and a bump 23 that joins a readout circuit. In the circuit board 30, circuit elements such as FETs and capacitors and wirings are formed on a Si substrate 31 (not shown), and bumps 32 are formed thereon. As shown in FIG. 1A, the bump 23 of the sensor substrate 20 and the bump 32 of the circuit board 30 are arranged so as to face each other and aligned.

  FIG. 1B shows a state in which the sensor substrate 20 is lowered from the state of FIG. 1A and the sensor substrate 20 is pressurized from above to below. The bumps 23 and the bumps 32 are pressed against each other by pressurization. In a so-called cold pressure contact state. The pressurization at this time is performed at room temperature.

  Subsequent to FIG. 1B, heating is performed in order to ensure more bonding, and the bumps are melted (FIG. 1C). The heating temperature is 180 to 200 ° C. because the In melting temperature of the bump is 165 ° C. Thus, the sensor board 20 and the circuit board 30 are bonded together.

  Conventionally, since the size of the sensor substrate is about 10 mm square, even if bonding is performed by heating, the positional deviation of the bumps due to the expansion of both substrates due to thermal expansion has not been a problem. However, when the sensor substrate is increased in size (for example, about 20 mm square), the bumps may be displaced. FIG. 2 shows a state in which a position shift occurs in the peripheral portion of the sensor substrate 20. The upper figure shows a state in which the sensor board 20 and the circuit board 30 are aligned at substantially the center of the board, and the middle figure is a partially enlarged view of the peripheral part. Due to the heating, the GaAs of the sensor substrate 20 has a larger thermal expansion coefficient than the Si of the circuit substrate 30 and thus expands more greatly, resulting in a bump misalignment. The state in which the bump is melted by heating in this state is shown below, and a short circuit with an adjacent bump is caused by the melting of the bump.

In order not to cause bump displacement during heating, the GaAs sensor substrate or Si circuit substrate can be divided into individual pieces, for example, divided into pixels, fixed to the other substrate, and then heat bonded. Conceivable. When the sensor substrate side is divided, it is necessary to align the light receiving surface of the divided sensor chip perpendicularly to the incident light, and all the pixel pieces (for example, tens of thousands to several pieces when divided into individual pixels) In this way.
(First embodiment)
The first embodiment is an example in which the Si circuit board side is divided. First, the circuit of the infrared detection element which performs division will be described. FIG. 3 is a diagram in which the circuit concept of the infrared detection element is extracted for one pixel. A dotted line in the figure shows a boundary where the bumps are joined, the left side is formed on the sensor substrate, and the right side is formed on the circuit substrate. The electrode at the upper end of QWIP or QDIP on the left side is connected to the circuit enclosed by the alternate long and short dash line shown in FIG. The end is connected to the ground as a common electrode. The drive circuit is formed by three switches S1, S2, S3 and one capacitor C as shown in FIG. In the circuit operation, first, the switches S1 and S3 are opened, the switch S2 is closed, and the capacitor C is charged (the switch S2 is connected to a power source not shown). Next, the switch S2 is opened and the switch S1 is closed, and the charge accumulated in the capacitor C is discharged through the sensor (QWIP or QDIP). When the amount of incident infrared rays incident on the sensor is large, the amount of charge to be discharged is large. Conversely, when the amount of incident light is small, the amount of charge to be discharged is small. After a predetermined time, the switch S1 is opened and the switch S3 is closed, and the amount of charge remaining in the capacitor C is output as a voltage, whereby the amount of incident infrared rays can be detected.

  When the circuit board is divided, this drive circuit is a unit that can be divided into the smallest pieces. Although the details of the structure of the infrared detection element of the present invention will be described later, the circuit board includes a circuit element constituted by a shift register, a selection switch, an AD converter, etc. for scanning pixels in addition to the drive circuit, but only the drive circuit. Is divided into pieces. Since a general-purpose chip can be used for the other circuit elements, a readout circuit is provided by mounting a drive circuit newly provided with a wiring board and chips of other circuit elements. That is, the state in which the drive circuit and the chip are mounted on the wiring board corresponds to a conventional circuit board. Since the wiring substrate simply forms a wiring pattern, it can be manufactured on a substrate other than Si.

  Next, a structural example of the infrared detection element of the present invention will be described with reference to FIG. In FIG. 4, the infrared detection element 100 includes a GaAs sensor substrate 200, a Si drive circuit substrate 300, and a GaAs wiring substrate 400. The sensor substrate 200 includes a substrate part 210, an infrared photosensitive part 220, and bumps 230. This is the same as the substrate portion 21, the infrared photosensitive portion 22, and the bump 23 of the sensor substrate 20 shown in FIG.

  The drive circuit board 300 is obtained by dividing the drive circuit portion in the readout circuit shown in FIG. 3, and includes a circuit element layer 320 in which FETs and capacitors for performing a switching operation are formed on the Si substrate 310, and a circuit element layer. It is composed of In bumps 330 formed on 320, and through terminals (TSV: Through-Silicon via) 340 formed through the Si substrate 310. Micro bumps 350 are formed at the ends of the through terminals 340. The drive circuit board 300 is bonded to the wiring board 400 via the micro bumps 350 of the through terminals 340. Further, the drive circuit board 300 is bonded to the sensor board 200 via the bumps 330 formed on the drive circuit board 300.

  The wiring substrate 400 is obtained by forming a wiring pattern 420 and a micro bump 430 on a GaAs substrate 410. A chip (not shown) such as a drive circuit board 300, a shift register, or an AD converter is mounted on the wiring board 400. These chips exchange electric signals with the drive circuit through the wiring pattern and the through terminals 340.

  As shown in FIG. 4, the drive circuit substrate 300 made of Si is divided for each pixel and has a structure sandwiched between the wiring substrate 400 made of GaAs and the sensor substrate 200. Even if such is added, the wiring board 400 and the sensor board 200 expand with the same coefficient of thermal expansion. For this reason, the problem by the thermal expansion difference of Si and GaAs does not generate | occur | produce. In addition, since the sensor substrate 200 is integrated without being divided for each pixel, a common wiring can be used as in the past, and a problem that the direction of the light receiving surface is uneven for each pixel does not occur.

  Next, a creation flow of the infrared detection element 100 will be described. As described above, since the infrared detection element 100 is composed of the three types of substrates, the sensor substrate 200, the drive circuit substrate 300, and the wiring substrate 400, these substrates are prepared. Before explaining the flow of creating the infrared detection element 100, an outline of each prepared substrate will be described.

First, the sensor substrate 200 will be described. Here, a quantum well infrared sensor is taken as an example, and the flow of creating the sensor substrate 200 will be described with reference to FIGS. First, in FIG. 5A, an i-GaAs film having a thickness of about 1 μm is formed as a buffer layer 202 on a GaAs substrate 201 by MBE (Molecular Beam Epitaxy). Subsequently, an Al _0.3 Ga _0.7 As film of about 0.1 μm is formed as an etching stopper layer 203 and an n-GaAs film of about 1.2 μm is formed as a lower electrode 204 on the buffer layer 202. . At this time, Si is used as an n-type dopant, and its concentration is about 1 × 10 ¹⁸ cm ⁻³ . Next, the process moves to the formation of a photosensitive element sensitive to infrared rays having a wavelength of 9 μm. The photosensitive element is formed by alternately stacking Al0.26Ga0.74As films (thickness: about 500 mm) and n-GaAs films (thickness: about 50 mm) to form a photosensitive element layer 205. At this time, the dopant of the n-GaAs film is Si, and the concentration is about 1 × 10 17 cm ⁻³ . Then, an n-GaAs film of about 0.1 μm is formed as the upper electrode 206 on the photosensitive element layer 205.

  Subsequently, an element isolation groove for separating the photosensitive element layer for each pixel is formed using photolithography and dry etching. At this time, since the lower electrode 204 is a common electrode, the lower electrode 204 portion is left (FIG. 5B).

  An AuGe film 207 for obtaining an ohmic contact is formed on the upper electrode layer 206 subjected to element isolation. A metal film (Ti / Au) is formed thereon to form a base layer 208 serving as a base for bumps and wiring. At this time, the sensitivity to infrared rays can be improved by forming a diffraction grating pattern (not shown) on the metal film. The In bumps 230 are formed on the underlying layer 208 to complete the sensor substrate 200 (FIGS. 5C to 6E).

  Next, the drive circuit board 300 will be described. The drive circuit board 300 uses a Si substrate to form a drive circuit surrounded by a one-dot chain line in FIG. 3 corresponding to each pixel by a normal LSI process. At this time, through terminals are also formed in the thickness direction of the Si substrate. Thereafter, the back surface of the Si substrate is back-grinded to make a thin piece, and through terminals that penetrate the Si substrate are exposed by back etching. Further, the insulating film at the end of the through terminal is removed to expose the electrode material, and a micro bump is formed here. In the Si substrate, a plurality of drive circuit substrates 300 before separation (before separation) are formed.

  The wiring board 400 forms a multilayer wiring pattern by a normal LSI process using a GaAs substrate. Micro bumps are formed at positions where chips such as the drive circuit board 300 and the shift register are mounted. As the micro bump, In / Au or the like can be used. In general, GaAs-based materials are prone to crystal dislocations due to stress and the like, and the device performance is affected. Therefore, a process of applying high pressure cannot be used. However, in this case, only the wiring layer is formed on the wiring substrate 400. There is no need to worry about crystal dislocations.

  In the above description, the sensor substrate 200 necessary for manufacturing the infrared detection element 100, the drive circuit substrate 300 having a plurality formed on the Si substrate, and the wiring substrate 400 are prepared. A manufacturing flow of the infrared detection element 100 using these substrates will be described with reference to FIGS. In this manufacturing flow, the description will focus on the bonding of the sensor substrate 200, the drive circuit substrate 300, and the wiring substrate 400.

  In FIG. 7, first, the wiring board 400 is placed on a mounting table (not shown), and the driving circuit board 300 before singulation from above the wiring board 400 is arranged with the micro bumps 350 of the same board, and the micro board 350 of the wiring board 400. Positioning is performed so as to coincide with the bumps 430, and superposition is performed. In this state, the drive circuit board 300 is pressed and pressed against the wiring board 400. Since this pressure contact is performed at room temperature, there is no displacement due to the difference in thermal expansion coefficient between GaAs of the wiring board 400 and Si of the drive circuit board 300 (FIGS. 7A and 7B).

  In a state where the drive circuit board 300 of FIG. 7B is bonded to the wiring board 400, the drive circuit board 300 is cut into a drive circuit corresponding to one pixel by laser dicing. That is, singulation is performed. Subsequently, In bumps 330 are formed on the upper surfaces of the individual drive circuit substrates 300. Here, the bumps 330 are formed after the separation, but the bumps 330 may be formed before the separation. Further, although the singulation is performed by laser dicing, the singulation may be performed by using photolithography and dry etching (FIGS. 7C and 7D).

  With the drive circuit board 300 singulated on the wiring board 400 mounted, the bump 230 of the sensor board 200 described above faces downward so that the sensor board 200 bump 230 matches the bump 330 of the drive circuit board 300. Align and press to overlap. The bump 230 and the bump 330 are pressed against each other by pressurization (FIGS. 8E and 8F).

  In order to make the pressure contact more rigid, the bump 230 and the bump 330 are melted by heating to a temperature higher than the melting temperature of In (here, 180 to 200 ° C.). The bump 230 and the bump 330 are integrated by melting the bump. By heating, both the wiring substrate 400 and the sensor substrate 200 are GaAs, so that they are similarly expanded by thermal expansion, and the Si driving circuit substrate 300 having a thermal expansion coefficient different from that of GaAs is divided for each pixel. There is no problem of causing a positional shift between the bump 230 and the bump 330 due to the difference. Further, since the photosensitive element portion 220 is bonded using relatively soft In bumps 230, problems such as crystal dislocation due to stress do not occur and the performance is maintained (FIG. 9 (g)).

  After the bumps are melted, dry etching is performed from the GaAs substrate 201 side of the sensor substrate 200, and the GaAs substrate 201 and the buffer layer 202 up to the etching stopper layer 203 are cut and thinned. The thinning is performed in order to suppress the attenuation when incident infrared light passes through the substrate part 210 and efficiently reach the infrared photosensitive part 220. This completes the infrared detection element 100. In the embodiment, the drive circuit board 300 before being separated into pieces is separated (separated) after being joined to the wiring board 400, but the drive circuit board 300 that has been separated into pieces is joined to the wiring board 400. It may be. Here, the drive circuit board 300 corresponds to each pixel, but may be a drive circuit board corresponding to every several pixels.

  In the above, the manufacturing flow centering on the joining method of the sensor board | substrate 200, the drive circuit board | substrate 300, and the wiring board 400 was shown. It is necessary to further mount a chip such as a shift register or an AD converter on the wiring board 400. FIG. 10 is a diagram showing a state in which these chips are mounted. FIG. 10A shows a planar layout of the infrared detecting element 100 viewed from the side on which infrared rays are incident, and FIG. 10B is a diagram showing a cross section taken along line AA ′ shown in FIG. is there. As shown in FIG. 10A, the wiring substrate 400 is larger than the sensor substrate 200, the sensor substrate 200 is mounted at the center, and a chip 500 such as a shift register is mounted around the sensor substrate 200. A drive circuit board 300 indicated by a dotted line is mounted under the sensor board 200 in a two-dimensional array. One of the two-dimensionally arranged drive circuit boards 300 indicated by diagonal lines is a short board 301 for common electrode wiring, which serves as a short bar for connecting the common electrode of the sensor board 200 and the wiring board 400. is there. By providing this short substrate 301, it is not necessary to form two bumps on the infrared photosensitive portion 220 of the sensor substrate (one bump may be sufficient). The drive circuit board 300 and the chip 500 such as a shift register are electrically connected by a wiring pattern 420 shown in the partial enlarged view of FIG.

DESCRIPTION OF SYMBOLS 10 Infrared sensing element 20 Sensor substrate 21 Substrate part 22 Infrared photosensitive part 23 Bump 30 Circuit board 31 Si substrate 32 Bump 100 Infrared sensing element 200 Sensor substrate 201 GaAs substrate 202 Buffer layer 203 Etching stopper layer 204 Lower electrode 205 Photosensitive element layer 206 Upper part Electrode 207 AuGe film 208 Underlayer 210 Substrate portion 220 Infrared photosensitive portion 230 Bump 300 Drive circuit substrate 301 Short substrate 310 Si substrate 320 Circuit element layer 330 Bump 340 Through terminal 350 Micro bump 400 Wiring substrate 410 GaAs substrate 420 Wiring pattern 430 Micro bump 500 chips

Claims (5)

A first bonding for bonding a wiring board made of a first material on which a wiring pattern is formed and a driving circuit board made of a second material on which a plurality of driving circuits for reading signals from pixels that detect infrared rays are formed at room temperature. Process,
A singulation process for dividing the drive circuit board bonded to the wiring board;
A second bonding step of heat-bonding the drive circuit substrate separated into pieces and the sensor substrate made of the first material and arranged with the pixels that detect infrared rays, at a predetermined temperature. Of manufacturing infrared detecting element. 2. The method of manufacturing an infrared detection element according to claim 1, wherein the first material is GaAs and the second material is Si. 3. The method for manufacturing an infrared detection element according to claim 1, wherein the sensor substrate and the drive circuit substrate are bonded by In bumps. The said pixel is a quantum well type or a quantum dot type sensor. The manufacturing method of the infrared detection element of any one of Claim 1 thru | or 3 characterized by the above-mentioned. A sensor substrate made of a first material and arranged with a plurality of pixels for detecting infrared rays;
A piece made of a second material and having a drive circuit for reading a signal from the pixel;
A wiring board made of the first material and having a wiring pattern formed thereon;
The infrared detection element, wherein the piece is mounted on the wiring substrate corresponding to one or more of the pixels, and the sensor substrate is mounted on the piece.

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