JPS5771136A - Formation of very fine aperture in silicon nitride film - Google Patents

Formation of very fine aperture in silicon nitride film

Info

Publication number
JPS5771136A
JPS5771136A JP14684980A JP14684980A JPS5771136A JP S5771136 A JPS5771136 A JP S5771136A JP 14684980 A JP14684980 A JP 14684980A JP 14684980 A JP14684980 A JP 14684980A JP S5771136 A JPS5771136 A JP S5771136A
Authority
JP
Japan
Prior art keywords
film
mask
si3n4
sio2
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14684980A
Other languages
Japanese (ja)
Inventor
Toshiro Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14684980A priority Critical patent/JPS5771136A/en
Publication of JPS5771136A publication Critical patent/JPS5771136A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To create a very fine aperture in an Si3N4 film by a method wherein a photoresist mask is used to selectively convert into SiO2 the polycrystalline Si film layed on an si3N4 film and then the resultant SiO2 serves as a mask. CONSTITUTION:Films of Si3N4 2, polycrystalline Si 3, Si3N4 4, SiO2 5 are piled one upon another on an Si substrate 1 by means of the CVD techinique. A photoresist mask 6 is then applied and a pattern 15 is formed by selectively etching the SiO2 film 5 using HF solution. The Si3N4 film 4 is selectively etched by hot phosphoric acid with the pattern 15 serving as mask. The mask 15 is removed and a pattern 14 is formed of Si3N4. Next, using the pattern 14 as mask, the polycrystalline Si film 3 is selectively changed into an SiO2 film 23 in a wet oxidating environment. The period of heat treatment is regulated to control the side-wise growth of SiO2 from the pattern 14, thereby determining the width of the remaining portion of the polycrystalline Si film 13. The mask 14 is removed and the polycrystalline Si film 13 is etched away, and then the Si3N4 film 2 is etched away with the film 23 as mask, leaving behind a very fine aperture 7. Then the mask 23 is removed, completing the process.
JP14684980A 1980-10-22 1980-10-22 Formation of very fine aperture in silicon nitride film Pending JPS5771136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14684980A JPS5771136A (en) 1980-10-22 1980-10-22 Formation of very fine aperture in silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14684980A JPS5771136A (en) 1980-10-22 1980-10-22 Formation of very fine aperture in silicon nitride film

Publications (1)

Publication Number Publication Date
JPS5771136A true JPS5771136A (en) 1982-05-01

Family

ID=15416924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14684980A Pending JPS5771136A (en) 1980-10-22 1980-10-22 Formation of very fine aperture in silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5771136A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980966A (en) * 1982-09-21 1984-05-10 トムソン−セエスエフ Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980966A (en) * 1982-09-21 1984-05-10 トムソン−セエスエフ Gate structure of integrated circuit containing gate-insulator-semiconductor element and method of producing integrated circuit using same structure

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