JPS5766591A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5766591A
JPS5766591A JP55143229A JP14322980A JPS5766591A JP S5766591 A JPS5766591 A JP S5766591A JP 55143229 A JP55143229 A JP 55143229A JP 14322980 A JP14322980 A JP 14322980A JP S5766591 A JPS5766591 A JP S5766591A
Authority
JP
Japan
Prior art keywords
difference
time constant
memory cells
bit lines
blr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143229A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55143229A priority Critical patent/JPS5766591A/en
Publication of JPS5766591A publication Critical patent/JPS5766591A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To fetch stored information accurately at a high speed by lessening the unbalance of a readout potential, by connecting dummy cells to bit lines between memory cells. CONSTITUTION:Dummy word lines DWLL and DWLR are positioned near the centers of bit lines BLL and BLR respectively, and dummy cells CDR and CDR are connected to the bit lines BLL and BLR nearly in the center between memory cells. Consequently, when a difference in time constant is worst, the closest and farthest memory cells to and from a sense amplifier are selected in the figure (B); the difference in time constant at this time is the product RBXCBX(1/2) of the halved resistance RB of a bit line and capacity CB and it is reduced to half that in the figure (A) to improve the difference greatly, thereby reducing the unbalance of a readout potential due to the difference in time constant.
JP55143229A 1980-10-13 1980-10-13 Memory circuit Pending JPS5766591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143229A JPS5766591A (en) 1980-10-13 1980-10-13 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143229A JPS5766591A (en) 1980-10-13 1980-10-13 Memory circuit

Publications (1)

Publication Number Publication Date
JPS5766591A true JPS5766591A (en) 1982-04-22

Family

ID=15333896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143229A Pending JPS5766591A (en) 1980-10-13 1980-10-13 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5766591A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000051869A (en) * 1999-01-27 2000-08-16 김영환 Open bit-line dram cell array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000051869A (en) * 1999-01-27 2000-08-16 김영환 Open bit-line dram cell array

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