JPS5762561A - Static induction type semiconductor switching element - Google Patents
Static induction type semiconductor switching elementInfo
- Publication number
- JPS5762561A JPS5762561A JP55137578A JP13757880A JPS5762561A JP S5762561 A JPS5762561 A JP S5762561A JP 55137578 A JP55137578 A JP 55137578A JP 13757880 A JP13757880 A JP 13757880A JP S5762561 A JPS5762561 A JP S5762561A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- emitter
- channel
- static induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137578A JPS5762561A (en) | 1980-10-03 | 1980-10-03 | Static induction type semiconductor switching element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137578A JPS5762561A (en) | 1980-10-03 | 1980-10-03 | Static induction type semiconductor switching element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5762561A true JPS5762561A (en) | 1982-04-15 |
JPS631757B2 JPS631757B2 (enrdf_load_stackoverflow) | 1988-01-13 |
Family
ID=15201990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55137578A Granted JPS5762561A (en) | 1980-10-03 | 1980-10-03 | Static induction type semiconductor switching element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762561A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63257274A (ja) * | 1987-04-14 | 1988-10-25 | Toyota Central Res & Dev Lab Inc | 静電誘導型半導体装置 |
US4914043A (en) * | 1986-09-26 | 1990-04-03 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of making an integrated light-triggered and light-quenched static induction thyristor |
US4943840A (en) * | 1985-11-29 | 1990-07-24 | Bbc Brown, Boveri & Company, Limited | Reverse-conducting thyristor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0234468U (enrdf_load_stackoverflow) * | 1988-08-29 | 1990-03-05 |
-
1980
- 1980-10-03 JP JP55137578A patent/JPS5762561A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4943840A (en) * | 1985-11-29 | 1990-07-24 | Bbc Brown, Boveri & Company, Limited | Reverse-conducting thyristor |
US4914043A (en) * | 1986-09-26 | 1990-04-03 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of making an integrated light-triggered and light-quenched static induction thyristor |
JPS63257274A (ja) * | 1987-04-14 | 1988-10-25 | Toyota Central Res & Dev Lab Inc | 静電誘導型半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS631757B2 (enrdf_load_stackoverflow) | 1988-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4779126A (en) | Optically triggered lateral thyristor with auxiliary region | |
JPS5788771A (en) | Electrostatic induction thyristor | |
GB1032599A (en) | Junction transistor structure | |
JPS5762561A (en) | Static induction type semiconductor switching element | |
US4236169A (en) | Thyristor device | |
JPS6481271A (en) | Conductivity-modulation type mosfet | |
GB1175312A (en) | Semiconductor Switching Device | |
US4338617A (en) | Four terminal GTO thyristor with transistor controlled turn-off | |
JPS5473585A (en) | Gate turn-off thyristor | |
JPS57147276A (en) | Reverse conductive type semiconductor switching device | |
JPS5718360A (en) | Gate controlling semiconductor element | |
WO1993013559A1 (en) | Field effect transistor controlled thyristor having improved turn-on characteristics | |
JPS56150862A (en) | Semiconductor device | |
JPS57181162A (en) | Gate turn off thyristor | |
JPS54121074A (en) | Semiconductor switching element | |
JPS568873A (en) | Bipolar transistor | |
RU98104021A (ru) | Тиристор с двухсторонним управлением | |
JPS5250175A (en) | Electrostatic induction type thyristor | |
JPS56104467A (en) | Reverse conducting thyristor | |
JPS5674940A (en) | Integrated semiconductor device | |
JPS561562A (en) | Electrostatic induction type semiconductor logic circuit device | |
JPS537179A (en) | Thyristor | |
JPS5457974A (en) | Thyristor with amplifying gate | |
JPH065739B2 (ja) | 光駆動型半導体制御整流装置 | |
JPS57141959A (en) | Electrostatic induction thyristor |