JPS5762055A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5762055A
JPS5762055A JP55137151A JP13715180A JPS5762055A JP S5762055 A JPS5762055 A JP S5762055A JP 55137151 A JP55137151 A JP 55137151A JP 13715180 A JP13715180 A JP 13715180A JP S5762055 A JPS5762055 A JP S5762055A
Authority
JP
Japan
Prior art keywords
photoconductive
interlayer
sixn1
atomic
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55137151A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6341060B2 (enrdf_load_stackoverflow
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55137151A priority Critical patent/JPS5762055A/ja
Priority to US06/304,568 priority patent/US4394426A/en
Priority to GB8128841A priority patent/GB2087643B/en
Priority to AU75648/81A priority patent/AU554181B2/en
Priority to FR8118123A priority patent/FR2490839B1/fr
Priority to DE813152399A priority patent/DE3152399A1/de
Priority to CA000386703A priority patent/CA1181628A/en
Priority to NL8104426A priority patent/NL192142C/nl
Priority to PCT/JP1981/000256 priority patent/WO1982001261A1/ja
Publication of JPS5762055A publication Critical patent/JPS5762055A/ja
Publication of JPS6341060B2 publication Critical patent/JPS6341060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
JP55137151A 1980-09-25 1980-09-30 Photoconductive member Granted JPS5762055A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP55137151A JPS5762055A (en) 1980-09-30 1980-09-30 Photoconductive member
US06/304,568 US4394426A (en) 1980-09-25 1981-09-22 Photoconductive member with α-Si(N) barrier layer
GB8128841A GB2087643B (en) 1980-09-25 1981-09-24 Photoconductive member
AU75648/81A AU554181B2 (en) 1980-09-25 1981-09-24 Photoconductive device
FR8118123A FR2490839B1 (fr) 1980-09-25 1981-09-25 Element photoconducteur
DE813152399A DE3152399A1 (en) 1980-09-25 1981-09-25 Photoconductive member
CA000386703A CA1181628A (en) 1980-09-25 1981-09-25 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing nitrogen
NL8104426A NL192142C (nl) 1980-09-25 1981-09-25 Fotogeleidend orgaan.
PCT/JP1981/000256 WO1982001261A1 (en) 1980-09-25 1981-09-25 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55137151A JPS5762055A (en) 1980-09-30 1980-09-30 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS5762055A true JPS5762055A (en) 1982-04-14
JPS6341060B2 JPS6341060B2 (enrdf_load_stackoverflow) 1988-08-15

Family

ID=15192005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55137151A Granted JPS5762055A (en) 1980-09-25 1980-09-30 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5762055A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125736A (ja) * 1983-01-05 1984-07-20 Tomoegawa Paper Co Ltd 電子写真感光体およびその製造方法
JPS6187160A (ja) * 1984-10-05 1986-05-02 Fuji Electric Co Ltd 電子写真用感光体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125736A (ja) * 1983-01-05 1984-07-20 Tomoegawa Paper Co Ltd 電子写真感光体およびその製造方法
JPS6187160A (ja) * 1984-10-05 1986-05-02 Fuji Electric Co Ltd 電子写真用感光体

Also Published As

Publication number Publication date
JPS6341060B2 (enrdf_load_stackoverflow) 1988-08-15

Similar Documents

Publication Publication Date Title
JPS56135968A (en) Amorphous silicon thin film transistor and manufacture thereof
JPS56146142A (en) Electrophotographic sensitive film
JPS57177156A (en) Photoconductive material
EP0136034A3 (en) Method of forming an electrically conductive member
JPS56135980A (en) Photoelectric conversion element
JPS5762053A (en) Photoconductive member
JPS57105745A (en) Photoconductive member
JPS5762055A (en) Photoconductive member
JPS5758160A (en) Photoconductive member
JPS5762054A (en) Photoconductive member
JPS56125881A (en) Optical semiconductor element
JPS5451832A (en) Photomask material
JPS644083A (en) Photovoltaic device
EP0095283A3 (en) Memory device
JPS5743477A (en) Photovoltaic device
JPS56142680A (en) Photoconductive semiconductor device
JPS5721875A (en) Photosensor
JPS57115555A (en) Photoconductive material
SU1609365A1 (ru) Фотокатодный узел фотоэлектронного прибора
JPS57116347A (en) Photoconductive material
JPS6417064A (en) Photosensitive body
JPS6420558A (en) Photosensitive body and its manufacture
JPS5739587A (en) Manufacture of photoelectric converter
JPS5289926A (en) Electrophotographic light sensitive plate
JPS5669638A (en) Production of function separation type electrophotographic receptor