JPS5762055A - Photoconductive member - Google Patents
Photoconductive memberInfo
- Publication number
- JPS5762055A JPS5762055A JP55137151A JP13715180A JPS5762055A JP S5762055 A JPS5762055 A JP S5762055A JP 55137151 A JP55137151 A JP 55137151A JP 13715180 A JP13715180 A JP 13715180A JP S5762055 A JPS5762055 A JP S5762055A
- Authority
- JP
- Japan
- Prior art keywords
- photoconductive
- interlayer
- sixn1
- atomic
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain a photoconductive member stable in electrical, optical, and photoconductive characteristics, and long in service life, by providing a specified interlayer between a substrate and a photoconductive layer made of a halogen-containing amorphous silicon (a-Si:X). CONSTITUTION:An interlayer is composed of a nonphotoconductive amorphous material a-(SixN1-x)y:X1-y consisting of the matrix of silicon and 30-60 atomic % nitrogen, and 1-20 atomic % halogen. A photoconductive member is prepared by forming said 30-1,000 Angstrom thick interlayer 102 made of a-(SixN1-x)y:H1-y on the substrate 101, such as a matellic plate or a plastic film subjected to conductivity-enhancing treatment, and further on the layer 102 a photoconductive layer 103 made of a-Si:X having >=5X10<9> ohm.cm dark resistivity.
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137151A JPS5762055A (en) | 1980-09-30 | 1980-09-30 | Photoconductive member |
US06/304,568 US4394426A (en) | 1980-09-25 | 1981-09-22 | Photoconductive member with α-Si(N) barrier layer |
AU75648/81A AU554181B2 (en) | 1980-09-25 | 1981-09-24 | Photoconductive device |
GB8128841A GB2087643B (en) | 1980-09-25 | 1981-09-24 | Photoconductive member |
PCT/JP1981/000256 WO1982001261A1 (en) | 1980-09-25 | 1981-09-25 | Photoconductive member |
DE813152399A DE3152399A1 (en) | 1980-09-25 | 1981-09-25 | Photoconductive member |
CA000386703A CA1181628A (en) | 1980-09-25 | 1981-09-25 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing nitrogen |
FR8118123A FR2490839B1 (en) | 1980-09-25 | 1981-09-25 | PHOTOCONDUCTIVE ELEMENT |
NL8104426A NL192142C (en) | 1980-09-25 | 1981-09-25 | Photoconductive organ. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137151A JPS5762055A (en) | 1980-09-30 | 1980-09-30 | Photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5762055A true JPS5762055A (en) | 1982-04-14 |
JPS6341060B2 JPS6341060B2 (en) | 1988-08-15 |
Family
ID=15192005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55137151A Granted JPS5762055A (en) | 1980-09-25 | 1980-09-30 | Photoconductive member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762055A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125736A (en) * | 1983-01-05 | 1984-07-20 | Tomoegawa Paper Co Ltd | Electrophotographic sensitive body and its manufacture |
JPS6187160A (en) * | 1984-10-05 | 1986-05-02 | Fuji Electric Co Ltd | Electrophotographic sensitive body |
-
1980
- 1980-09-30 JP JP55137151A patent/JPS5762055A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125736A (en) * | 1983-01-05 | 1984-07-20 | Tomoegawa Paper Co Ltd | Electrophotographic sensitive body and its manufacture |
JPH0426105B2 (en) * | 1983-01-05 | 1992-05-06 | Tomoegawa Paper Co Ltd | |
JPS6187160A (en) * | 1984-10-05 | 1986-05-02 | Fuji Electric Co Ltd | Electrophotographic sensitive body |
JPH0511305B2 (en) * | 1984-10-05 | 1993-02-15 | Fuji Electric Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6341060B2 (en) | 1988-08-15 |
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