JPS5760240A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducerInfo
- Publication number
- JPS5760240A JPS5760240A JP13513480A JP13513480A JPS5760240A JP S5760240 A JPS5760240 A JP S5760240A JP 13513480 A JP13513480 A JP 13513480A JP 13513480 A JP13513480 A JP 13513480A JP S5760240 A JPS5760240 A JP S5760240A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- glass
- pedestal
- center
- pressure introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
Abstract
PURPOSE:To obtain a small product with a better characteristic by bonding a pressure sensitive silicon diaphragm on a pedestal having a pressure introduction path at the center thereof and a base glass having a pressure introduction path beneath thereof with a low melting point. CONSTITUTION:A pressure-sensitive silicon diaphragm 2 is bonded on a silicon pedestal 3 having a pressure introduction path at the center thereof with a solder glass 1 having a working temperature of 530 deg.C, for example, beforehand. A base glass 1 made of a copal glass is embedded into the center of a metal package leaving a pressure introduction on path. The base glass 11 and the pedestal 3 are soldered together with a solder glass having a working temperature of 460 deg.C, for example. The metal package 5 is of a disc made of a copal metal having a pressure introducing pipe 8 soldered on the bottom thereof. The output of the diaphragm 2 is drawn from lead wires 13 and 15 through a hermetic seal terminal 4. Thus, a small sized transducer can be manufactured with a better creep characteristic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13513480A JPS5760240A (en) | 1980-09-30 | 1980-09-30 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13513480A JPS5760240A (en) | 1980-09-30 | 1980-09-30 | Semiconductor pressure transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5760240A true JPS5760240A (en) | 1982-04-12 |
JPS6345051B2 JPS6345051B2 (en) | 1988-09-07 |
Family
ID=15144594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13513480A Granted JPS5760240A (en) | 1980-09-30 | 1980-09-30 | Semiconductor pressure transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5760240A (en) |
-
1980
- 1980-09-30 JP JP13513480A patent/JPS5760240A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6345051B2 (en) | 1988-09-07 |
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