JPS5750437A - Forming method for pattern of semiconductor device - Google Patents
Forming method for pattern of semiconductor deviceInfo
- Publication number
- JPS5750437A JPS5750437A JP55125778A JP12577880A JPS5750437A JP S5750437 A JPS5750437 A JP S5750437A JP 55125778 A JP55125778 A JP 55125778A JP 12577880 A JP12577880 A JP 12577880A JP S5750437 A JPS5750437 A JP S5750437A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- low viscosity
- pattern
- patterning
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P50/00—
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To obtain the minute pattern by coating the surface of a patterning material formed on a substrate with a material having low viscosity and etching the materials through an etching means which makes the speed of etching of the patterning material faster than the speed of etching of the material having low viscosity. CONSTITUTION:A predetermined pattern is shaped onto the semiconductor substrate 11 by a mask material 12 such as an oxide film, and the pattern is coated with the patterning material 13, such as polycrystal silicon, Al, etc. The material 14 having low viscosity, viscosity thereof is lowered by adding thinner to a photo- resist, is applied and the surface is flattened, and the mask mateial 12, the patterning material 13 and the material 14 having low viscosity are etched by using the etching means which satisfies Vm<Ve<Vp about each speed of etching Vm, Vp, Ve of respective material 12, 13, 14. If the material 14 having low viscosity and the mask material 12 are removed when etching advances properly, only the desired patterning material 13 remains, and the minute pattern is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55125778A JPS5750437A (en) | 1980-09-10 | 1980-09-10 | Forming method for pattern of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55125778A JPS5750437A (en) | 1980-09-10 | 1980-09-10 | Forming method for pattern of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5750437A true JPS5750437A (en) | 1982-03-24 |
Family
ID=14918601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55125778A Pending JPS5750437A (en) | 1980-09-10 | 1980-09-10 | Forming method for pattern of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5750437A (en) |
-
1980
- 1980-09-10 JP JP55125778A patent/JPS5750437A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5534442A (en) | Preparation of semiconductor device | |
| EP0095209A3 (en) | Method of forming a resist mask resistant to plasma etching | |
| JPS5750437A (en) | Forming method for pattern of semiconductor device | |
| CA2006175A1 (en) | Method of forming patterned silicone rubber layer | |
| JPS5591130A (en) | Production of semiconductor device | |
| JPS643663A (en) | Forming method for fine pattern | |
| JPS57100733A (en) | Etching method for semiconductor substrate | |
| JPS6424425A (en) | Formation of tapered pattern | |
| JPS56277A (en) | Forming method of metal layer pattern | |
| JPS6418223A (en) | Manufacture of semiconductor device | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS54107277A (en) | Production of semiconductor device | |
| JPS5533035A (en) | Forming of resist pattern shaped like inverted truncated pyramid | |
| JPS57118641A (en) | Lifting-off method | |
| JPS5799781A (en) | Manufacture of semiconductor device | |
| JPS56153736A (en) | Manufacture of semiconductor device | |
| JPS5796550A (en) | Manufacture of semiconductor device | |
| JPS54124975A (en) | Manufacture of semiconductor element | |
| JPS55124233A (en) | Manufacturing method of semiconductor device | |
| JPS559448A (en) | Method of manufacturing semiconductor device | |
| JPS52127173A (en) | Pattern formation method | |
| JPS5645029A (en) | Polyimide pattern forming method | |
| JPS54112744A (en) | Selectively etching method for insulating layer | |
| JPS55111139A (en) | Forming method of thin film for fine pattern | |
| JPS5516467A (en) | Method of patterning of insulating inorganic film |