JPS5749219A - Forming method for ionized thin film without necessity of direct gas plasma - Google Patents

Forming method for ionized thin film without necessity of direct gas plasma

Info

Publication number
JPS5749219A
JPS5749219A JP12440980A JP12440980A JPS5749219A JP S5749219 A JPS5749219 A JP S5749219A JP 12440980 A JP12440980 A JP 12440980A JP 12440980 A JP12440980 A JP 12440980A JP S5749219 A JPS5749219 A JP S5749219A
Authority
JP
Japan
Prior art keywords
thin film
dome
necessity
source
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12440980A
Other languages
English (en)
Inventor
Ayao Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wada Ayao
Original Assignee
Wada Ayao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wada Ayao filed Critical Wada Ayao
Priority to JP12440980A priority Critical patent/JPS5749219A/ja
Priority to EP19810106756 priority patent/EP0047456B1/en
Priority to DE8181106756T priority patent/DE3165070D1/de
Publication of JPS5749219A publication Critical patent/JPS5749219A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP12440980A 1980-09-08 1980-09-08 Forming method for ionized thin film without necessity of direct gas plasma Pending JPS5749219A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12440980A JPS5749219A (en) 1980-09-08 1980-09-08 Forming method for ionized thin film without necessity of direct gas plasma
EP19810106756 EP0047456B1 (en) 1980-09-08 1981-08-29 Ion plating without the introduction of gas
DE8181106756T DE3165070D1 (en) 1980-09-08 1981-08-29 Ion plating without the introduction of gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12440980A JPS5749219A (en) 1980-09-08 1980-09-08 Forming method for ionized thin film without necessity of direct gas plasma

Publications (1)

Publication Number Publication Date
JPS5749219A true JPS5749219A (en) 1982-03-23

Family

ID=14884748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12440980A Pending JPS5749219A (en) 1980-09-08 1980-09-08 Forming method for ionized thin film without necessity of direct gas plasma

Country Status (3)

Country Link
EP (1) EP0047456B1 (ja)
JP (1) JPS5749219A (ja)
DE (1) DE3165070D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217332A (ja) * 1983-05-24 1984-12-07 Mitsubishi Electric Corp 二酸化硅素膜の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2534599A1 (fr) * 1982-10-14 1984-04-20 Seftim Sa Dispositif de metallisation des surfaces minerales et organiques
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
US4478874A (en) * 1983-12-09 1984-10-23 Cosden Technology, Inc. Methods for improving the gas barrier properties of polymeric containers
EP0208487A3 (en) * 1985-07-01 1987-08-19 United Kingdom Atomic Energy Authority Coating improvements
CN85106828B (zh) * 1985-09-10 1987-09-09 张戈飞 金属零件表面形成硫化物层的方法及设备
WO2019111183A1 (en) 2017-12-06 2019-06-13 Arizona Thin Film Research Llc Systems and methods for additive manufacturing for the deposition of metal and ceramic materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4043889A (en) * 1976-01-02 1977-08-23 Sperry Rand Corporation Method of and apparatus for the radio frequency sputtering of a thin film
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217332A (ja) * 1983-05-24 1984-12-07 Mitsubishi Electric Corp 二酸化硅素膜の製造方法

Also Published As

Publication number Publication date
EP0047456A1 (en) 1982-03-17
EP0047456B1 (en) 1984-07-25
DE3165070D1 (en) 1984-08-30

Similar Documents

Publication Publication Date Title
US20020092616A1 (en) Apparatus for plasma treatment using capillary electrode discharge plasma shower
EP0343602A3 (en) Microwave plasma treating apparatus
GB9322966D0 (en) Method for making a semiconductor and apparatus for the same
TW469534B (en) Plasma processing method and apparatus
JPS5684476A (en) Etching method of gas plasma
JPS57131374A (en) Plasma etching device
JPS5730325A (en) Manufacture of amorphous silicon thin film
JPS5749219A (en) Forming method for ionized thin film without necessity of direct gas plasma
EP0641150A4 (en) TREATMENT DEVICE.
JPS62199767A (ja) イオンプレ−テイング装置
JPS56105480A (en) Plasma etching method
JPS5773178A (en) Production of oxide
EP0921556A3 (en) Thin film forming apparatus
JPS57161057A (en) Chemical vapor phase growth device using plasma
JPS57131373A (en) Plasma etching device
JPS5511127A (en) Forming method for oxidation film
JPS5760073A (en) Plasma etching method
KR20010020500A (ko) 마그네시아를 기초로 한 증착을 발생시키는 방법
JPS577129A (en) Treating method and device for sputtering
JPS5719034A (en) Vapor growth apparatus
JPS568816A (en) Manufacture of amorphous silicon film
JPS5612541A (en) Removing device of contaminant
US5900104A (en) Plasma system for enhancing the surface of a material
JPS5773175A (en) Chemical vapor deposition device
JPS5696837A (en) Dry etching device