JPS5748225A - Film forming method - Google Patents

Film forming method

Info

Publication number
JPS5748225A
JPS5748225A JP55122787A JP12278780A JPS5748225A JP S5748225 A JPS5748225 A JP S5748225A JP 55122787 A JP55122787 A JP 55122787A JP 12278780 A JP12278780 A JP 12278780A JP S5748225 A JPS5748225 A JP S5748225A
Authority
JP
Japan
Prior art keywords
substrate
film
clusters
chamber
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55122787A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55122787A priority Critical patent/JPS5748225A/en
Publication of JPS5748225A publication Critical patent/JPS5748225A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a semi-amorphous film which is suitable for a high-efficiency photoelectric transducer, by a method wherein, Si, Ge or compound of them is activated and clusterized at the position apart from a substrate and these clusters are adhered to the substrate so as to form a film. CONSTITUTION:An activation chamber 1 is provided at the position apart from a reaction chamber 7 which contains a boat 9 on which a substrate 10 is mounted. Reactive gas mach as silane is introduced from bombs 4-6 into the chamber 7 so as to be excited or activated or degenerated by induction energy of 0.1-10GHz generated by an oscillator 3 and transmitted by an isolator matching device 2 and is condensed to form clusters. The clusters are adhered and accumulated on the substrate 10 to form a film. With the above method a semi-amorphous semiconductor film which has intermediate properties inbetween a crystalline semiconductor and an amorphous semiconductor and is suitable for a high-efficiency photoelectric transducer is obtained.
JP55122787A 1980-09-04 1980-09-04 Film forming method Pending JPS5748225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122787A JPS5748225A (en) 1980-09-04 1980-09-04 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122787A JPS5748225A (en) 1980-09-04 1980-09-04 Film forming method

Publications (1)

Publication Number Publication Date
JPS5748225A true JPS5748225A (en) 1982-03-19

Family

ID=14844602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122787A Pending JPS5748225A (en) 1980-09-04 1980-09-04 Film forming method

Country Status (1)

Country Link
JP (1) JPS5748225A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141965A (en) * 1983-02-02 1984-08-14 三菱電機株式会社 Golf exerciser
JPS62172479U (en) * 1986-04-24 1987-11-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478524A (en) * 1977-11-19 1979-06-22 Concordia Fluidtechnik Gmbh Flowinggthrough valve for fluid

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478524A (en) * 1977-11-19 1979-06-22 Concordia Fluidtechnik Gmbh Flowinggthrough valve for fluid

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141965A (en) * 1983-02-02 1984-08-14 三菱電機株式会社 Golf exerciser
JPS62172479U (en) * 1986-04-24 1987-11-02

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