JPS574673A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS574673A
JPS574673A JP7877780A JP7877780A JPS574673A JP S574673 A JPS574673 A JP S574673A JP 7877780 A JP7877780 A JP 7877780A JP 7877780 A JP7877780 A JP 7877780A JP S574673 A JPS574673 A JP S574673A
Authority
JP
Japan
Prior art keywords
type semiconductor
region
solid
image sensor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7877780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS642271B2 (US07816562-20101019-C00012.png
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7877780A priority Critical patent/JPS574673A/ja
Publication of JPS574673A publication Critical patent/JPS574673A/ja
Publication of JPS642271B2 publication Critical patent/JPS642271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP7877780A 1980-06-11 1980-06-11 Solid-state image sensor Granted JPS574673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7877780A JPS574673A (en) 1980-06-11 1980-06-11 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7877780A JPS574673A (en) 1980-06-11 1980-06-11 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS574673A true JPS574673A (en) 1982-01-11
JPS642271B2 JPS642271B2 (US07816562-20101019-C00012.png) 1989-01-17

Family

ID=13671323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7877780A Granted JPS574673A (en) 1980-06-11 1980-06-11 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS574673A (US07816562-20101019-C00012.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428681U (US07816562-20101019-C00012.png) * 1990-06-29 1992-03-06

Also Published As

Publication number Publication date
JPS642271B2 (US07816562-20101019-C00012.png) 1989-01-17

Similar Documents

Publication Publication Date Title
GB1464755A (en) Two-phase charge coupled devices
JPS6484669A (en) Thin film transistor
JPS56157075A (en) Photoelectric transducing device
JPS574673A (en) Solid-state image sensor
JPS567479A (en) Field-effect type semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS5389685A (en) Production of semiconductor memory element
JPS5638863A (en) Semiconductor device
JPS5766671A (en) Semiconductor device
JPS5370769A (en) Production of semiconductor device
JPS5694671A (en) Manufacture of mis field-effect semiconductor device
JPS55146967A (en) Semiconductor ic device
JPS56126971A (en) Thin film field effect element
JPS5267963A (en) Manufacture of semiconductor unit
JPS5552262A (en) Mos semiconductor device
JPS53126270A (en) Production of semiconductor devices
JPS539488A (en) Production of semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS53100779A (en) Production of insulated gate type semiconductor device
JPS5768070A (en) Charge transfer device
JPS6413762A (en) Manufacture of solid-state image sensing device
JPS57136361A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS57106069A (en) Semiconductor device and manufacture thereof