JPS5746392A - Memory - Google Patents
MemoryInfo
- Publication number
- JPS5746392A JPS5746392A JP55123057A JP12305780A JPS5746392A JP S5746392 A JPS5746392 A JP S5746392A JP 55123057 A JP55123057 A JP 55123057A JP 12305780 A JP12305780 A JP 12305780A JP S5746392 A JPS5746392 A JP S5746392A
- Authority
- JP
- Japan
- Prior art keywords
- capacitive coupling
- line
- capacitance
- read out
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Abstract
PURPOSE:To eliminate the effect of noise, by applying the lowered voltage portion caused by the capacitive coupling to both input/output lines. CONSTITUTION:A data is read out of a memory cell 26, and O is read out of a cell connected to the same word line 25. In that case, the noise caused from each bit line and by the capacitive coupling is connected to an I/O line 20 through a capacitance 18, and to an I/O line 19 through a capacitance 38 respectively. The number of the capacitive coupling is equal to secure the same level between the both I/O lines. Accordingly an output sense amplifier is driven without requring queuing time. Thus, the data reading time for a random access memory is accelerated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55123057A JPS5746392A (en) | 1980-09-04 | 1980-09-04 | Memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55123057A JPS5746392A (en) | 1980-09-04 | 1980-09-04 | Memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5746392A true JPS5746392A (en) | 1982-03-16 |
JPS6110915B2 JPS6110915B2 (en) | 1986-03-31 |
Family
ID=14851123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55123057A Granted JPS5746392A (en) | 1980-09-04 | 1980-09-04 | Memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5746392A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104791A (en) * | 1982-12-04 | 1984-06-16 | Fujitsu Ltd | Semiconductor memory device |
JPS59231793A (en) * | 1983-06-14 | 1984-12-26 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS61144795A (en) * | 1984-12-17 | 1986-07-02 | Mitsubishi Electric Corp | Semiconductor storage device |
-
1980
- 1980-09-04 JP JP55123057A patent/JPS5746392A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104791A (en) * | 1982-12-04 | 1984-06-16 | Fujitsu Ltd | Semiconductor memory device |
JPH0252359B2 (en) * | 1982-12-04 | 1990-11-13 | Fujitsu Ltd | |
JPS59231793A (en) * | 1983-06-14 | 1984-12-26 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS61144795A (en) * | 1984-12-17 | 1986-07-02 | Mitsubishi Electric Corp | Semiconductor storage device |
JPH0518197B2 (en) * | 1984-12-17 | 1993-03-11 | Mitsubishi Electric Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS6110915B2 (en) | 1986-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5619586A (en) | Semiconductor memory unit | |
EP0149049A3 (en) | Data memory with simultaneous write and read | |
EP0293933A3 (en) | Dynamic memory circuit with improved sensing scheme | |
EP0118878A3 (en) | Semiconductor memory device | |
KR900015154A (en) | Di-RAM integrated semiconductor memory and its test method | |
KR900006220B1 (en) | Semiconductor memory device | |
IE830569L (en) | Single transistor, single capacitor mos random access memory | |
KR870008320A (en) | Semiconductor memory device composed of different type memory cells | |
EP0834883A3 (en) | Semiconductor nonvolatile memory device | |
JPS56156993A (en) | Read only memory | |
JPS5785255A (en) | Memory storage for integrated circuit | |
JPS5746392A (en) | Memory | |
EP0318927A3 (en) | Semiconductor memory circuit with sensing arrangement free from malfunction | |
EP0316877A3 (en) | Semiconductor memory device with improved output circuit | |
EP0158028A3 (en) | Random access memory device | |
JPS5427734A (en) | Dynamic semiconductor memory | |
JPS55157194A (en) | Semiconductor memory device | |
JPS5782286A (en) | Semiconductor storage device | |
JPS54100232A (en) | Integrated memory | |
JPS5558892A (en) | Flip flop circuit | |
JPS57111669A (en) | Output system for conjugation form of word | |
JPS578980A (en) | Memory device | |
JPS57127997A (en) | Semiconductor integrated storage device | |
JPS5746390A (en) | Dummy cell circuit | |
JPS57135498A (en) | Semiconductor memory |