JPS5743439A - Selective oxidation isolation type semiconductor device - Google Patents
Selective oxidation isolation type semiconductor deviceInfo
- Publication number
- JPS5743439A JPS5743439A JP10446481A JP10446481A JPS5743439A JP S5743439 A JPS5743439 A JP S5743439A JP 10446481 A JP10446481 A JP 10446481A JP 10446481 A JP10446481 A JP 10446481A JP S5743439 A JPS5743439 A JP S5743439A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- film
- emitter
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 title 1
- 238000007254 oxidation reaction Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 210000003323 beak Anatomy 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent the shortcircuit between an emitter and a base of a semiconductor device by forming an aluminum film (electrode) via a polycrystalline silicon layer at a bird beak part. CONSTITUTION:After an element isolating SiO2 film 6 is formed, a P type impurity is diffused throug a polycrystalline silicon layer 7, thereby forming a base region 9, the part to be formed with an emitter region is covered as a mask with an Si3N4 film 10, and the layer 7 is selectively oxidized. Then, the film 10 used as the mask is removed to expose the layer 7, and an emitter diffusion is performed through the layer 7. Then this layer 7 is used as a contacting unit between the emitter region and the aluminum electrode as it is.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10446481A JPS5743439A (en) | 1981-07-06 | 1981-07-06 | Selective oxidation isolation type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10446481A JPS5743439A (en) | 1981-07-06 | 1981-07-06 | Selective oxidation isolation type semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5642377A Division JPS53142185A (en) | 1977-05-18 | 1977-05-18 | Manufacture of walled emitter type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5743439A true JPS5743439A (en) | 1982-03-11 |
Family
ID=14381304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10446481A Pending JPS5743439A (en) | 1981-07-06 | 1981-07-06 | Selective oxidation isolation type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5743439A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140866A (en) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | HANDOTA ISOCHI |
JPS524433A (en) * | 1975-06-30 | 1977-01-13 | Matsushita Electric Works Ltd | Composite plating method |
-
1981
- 1981-07-06 JP JP10446481A patent/JPS5743439A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140866A (en) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | HANDOTA ISOCHI |
JPS524433A (en) * | 1975-06-30 | 1977-01-13 | Matsushita Electric Works Ltd | Composite plating method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS53135263A (en) | Production of semiconductor device | |
JPS5743439A (en) | Selective oxidation isolation type semiconductor device | |
JPS6446937A (en) | Manufacture of semiconductor device | |
JPS57133646A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5378181A (en) | Semiconductor device and its manufacture | |
JPS5541738A (en) | Preparation of semiconductor device | |
JPS6428935A (en) | Manufacture of semiconductor device | |
SE7709059L (en) | SELECTIVE DOPING OF A SEMICIDE BODY | |
JPS5468173A (en) | Semiconductor device and its manufacture | |
JPS54132167A (en) | Manufacture of semiconductor device | |
JPS5640256A (en) | Manufacture of semiconductor device | |
JPS5538084A (en) | Semiconductor integrated circuit device | |
JPS535970A (en) | Semiconductor device | |
JPS5670649A (en) | Manufacture of semiconductor device | |
JPS57157565A (en) | Manufacture of semiconductor device | |
JPS57199236A (en) | Manufacture of oxide film isolation semiconductor device | |
JPS6417422A (en) | Manufacture of semiconductor device | |
JPS54126477A (en) | Semiconductor device | |
JPS5482981A (en) | Nanufacture of semiconductor device | |
JPS5710949A (en) | Manufacture of semiconductor device | |
JPS5740974A (en) | Manufacture for semiconductor device | |
JPS57176764A (en) | Manufacture of semiconductor device | |
JPS54129881A (en) | Manufacture for semiconductor device | |
JPS5541750A (en) | Manufacturing semiconductor device |