JPS5743439A - Selective oxidation isolation type semiconductor device - Google Patents

Selective oxidation isolation type semiconductor device

Info

Publication number
JPS5743439A
JPS5743439A JP10446481A JP10446481A JPS5743439A JP S5743439 A JPS5743439 A JP S5743439A JP 10446481 A JP10446481 A JP 10446481A JP 10446481 A JP10446481 A JP 10446481A JP S5743439 A JPS5743439 A JP S5743439A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
film
emitter
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10446481A
Other languages
Japanese (ja)
Inventor
Takashi Ishikawa
Takaaki Mori
Takehisa Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10446481A priority Critical patent/JPS5743439A/en
Publication of JPS5743439A publication Critical patent/JPS5743439A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the shortcircuit between an emitter and a base of a semiconductor device by forming an aluminum film (electrode) via a polycrystalline silicon layer at a bird beak part. CONSTITUTION:After an element isolating SiO2 film 6 is formed, a P type impurity is diffused throug a polycrystalline silicon layer 7, thereby forming a base region 9, the part to be formed with an emitter region is covered as a mask with an Si3N4 film 10, and the layer 7 is selectively oxidized. Then, the film 10 used as the mask is removed to expose the layer 7, and an emitter diffusion is performed through the layer 7. Then this layer 7 is used as a contacting unit between the emitter region and the aluminum electrode as it is.
JP10446481A 1981-07-06 1981-07-06 Selective oxidation isolation type semiconductor device Pending JPS5743439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10446481A JPS5743439A (en) 1981-07-06 1981-07-06 Selective oxidation isolation type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10446481A JPS5743439A (en) 1981-07-06 1981-07-06 Selective oxidation isolation type semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5642377A Division JPS53142185A (en) 1977-05-18 1977-05-18 Manufacture of walled emitter type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5743439A true JPS5743439A (en) 1982-03-11

Family

ID=14381304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10446481A Pending JPS5743439A (en) 1981-07-06 1981-07-06 Selective oxidation isolation type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743439A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co HANDOTA ISOCHI
JPS524433A (en) * 1975-06-30 1977-01-13 Matsushita Electric Works Ltd Composite plating method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co HANDOTA ISOCHI
JPS524433A (en) * 1975-06-30 1977-01-13 Matsushita Electric Works Ltd Composite plating method

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