JPS5734360A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734360A
JPS5734360A JP11001680A JP11001680A JPS5734360A JP S5734360 A JPS5734360 A JP S5734360A JP 11001680 A JP11001680 A JP 11001680A JP 11001680 A JP11001680 A JP 11001680A JP S5734360 A JPS5734360 A JP S5734360A
Authority
JP
Japan
Prior art keywords
region
regions
collector
base
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11001680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348190B2 (enrdf_load_stackoverflow
Inventor
Kenichi Muramoto
Takeo Shiomi
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11001680A priority Critical patent/JPS5734360A/ja
Publication of JPS5734360A publication Critical patent/JPS5734360A/ja
Publication of JPS6348190B2 publication Critical patent/JPS6348190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP11001680A 1980-08-11 1980-08-11 Semiconductor device Granted JPS5734360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11001680A JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11001680A JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734360A true JPS5734360A (en) 1982-02-24
JPS6348190B2 JPS6348190B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=14524978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11001680A Granted JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734360A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727408A (en) * 1984-06-11 1988-02-23 Nec Corporation Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor
JPH02303035A (ja) * 1989-05-17 1990-12-17 Toshiba Corp 半導体装置
JPH04170072A (ja) * 1990-11-02 1992-06-17 Nec Corp 半導体装置
DE102019203395A1 (de) 2018-03-20 2019-09-26 Fanuc Corporation Armstruktur eines Roboters sowie Roboter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415988A (en) * 1974-12-11 1979-02-06 Saint Gobain Parts using between multiilayer window glass

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415988A (en) * 1974-12-11 1979-02-06 Saint Gobain Parts using between multiilayer window glass

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727408A (en) * 1984-06-11 1988-02-23 Nec Corporation Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor
JPH02303035A (ja) * 1989-05-17 1990-12-17 Toshiba Corp 半導体装置
JPH04170072A (ja) * 1990-11-02 1992-06-17 Nec Corp 半導体装置
DE102019203395A1 (de) 2018-03-20 2019-09-26 Fanuc Corporation Armstruktur eines Roboters sowie Roboter

Also Published As

Publication number Publication date
JPS6348190B2 (enrdf_load_stackoverflow) 1988-09-28

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