JPS5732179A - Manufacture of solid image pickup device - Google Patents

Manufacture of solid image pickup device

Info

Publication number
JPS5732179A
JPS5732179A JP10721580A JP10721580A JPS5732179A JP S5732179 A JPS5732179 A JP S5732179A JP 10721580 A JP10721580 A JP 10721580A JP 10721580 A JP10721580 A JP 10721580A JP S5732179 A JPS5732179 A JP S5732179A
Authority
JP
Japan
Prior art keywords
substrate
layer
point
diffused
phenomenon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10721580A
Other languages
English (en)
Inventor
Akihiko Furukawa
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10721580A priority Critical patent/JPS5732179A/ja
Publication of JPS5732179A publication Critical patent/JPS5732179A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10721580A 1980-08-06 1980-08-06 Manufacture of solid image pickup device Pending JPS5732179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10721580A JPS5732179A (en) 1980-08-06 1980-08-06 Manufacture of solid image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10721580A JPS5732179A (en) 1980-08-06 1980-08-06 Manufacture of solid image pickup device

Publications (1)

Publication Number Publication Date
JPS5732179A true JPS5732179A (en) 1982-02-20

Family

ID=14453400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10721580A Pending JPS5732179A (en) 1980-08-06 1980-08-06 Manufacture of solid image pickup device

Country Status (1)

Country Link
JP (1) JPS5732179A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397730A (en) * 1991-02-14 1995-03-14 Sony Corporation Method of making a high efficiency horizontal transfer section of a solid state imager

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397730A (en) * 1991-02-14 1995-03-14 Sony Corporation Method of making a high efficiency horizontal transfer section of a solid state imager

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