JPS5731168A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5731168A
JPS5731168A JP10611080A JP10611080A JPS5731168A JP S5731168 A JPS5731168 A JP S5731168A JP 10611080 A JP10611080 A JP 10611080A JP 10611080 A JP10611080 A JP 10611080A JP S5731168 A JPS5731168 A JP S5731168A
Authority
JP
Japan
Prior art keywords
electrode
gate
cost
insulating film
picture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10611080A
Other languages
Japanese (ja)
Other versions
JPS6335108B2 (en
Inventor
Kiyohiro Kawasaki
Takeshi Ishihara
Masazo Yoshiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10611080A priority Critical patent/JPS5731168A/en
Publication of JPS5731168A publication Critical patent/JPS5731168A/en
Publication of JPS6335108B2 publication Critical patent/JPS6335108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the cost of a picture display device, by a method wherein many picture units, each one of which consists of a plurality of picture elements, are gathered and bonded on a reinforcing board and the utilization factor of a semiconductor wafer is improved. CONSTITUTION:An aperture is made in a drain-video wire 20 in a picture element 26, an electrode 22 is added and a poly-Si gate-gate wire 23 are provided. A plurality of the picture elements 26 are gathered and a unit 27 is composed. On the back of the unit a metal layer 32 is placed and bonded to a reinforcing board 34, holding a resin layer 33 in between, by being compressed against a supporting base 28 under pressurized heating process. After being removed from the base 28, the units are covered with an insulating film 36, a video wire is produced by providing a drain electrode 38 and a metal wiring 39, a gate wiring 41 is provided in such a manner that it is connected to the gate electrode 23 through an interlayer insulating film 39 and a metal reflection electrode 44 is provided in such a manner that it is connected to the metal electrode 24 through an interlayer insulating film 42. Finally, as usual, a liquid crystal cell is completed by filling liquid crystal 13 between the reflection electrode 44 and a glass plate 15 on which a transparent electrode 14 is prepared. Thus by introducing the unit into high cost wafer processing, the cost of the chip, and therefore the cost of the device, is reduced.
JP10611080A 1980-07-31 1980-07-31 Semiconductor device Granted JPS5731168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10611080A JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10611080A JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5731168A true JPS5731168A (en) 1982-02-19
JPS6335108B2 JPS6335108B2 (en) 1988-07-13

Family

ID=14425330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10611080A Granted JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731168A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5657083A (en) * 1979-10-15 1981-05-19 Suwa Seikosha Kk Liquid crystal display unit
JPS56122089A (en) * 1980-02-29 1981-09-25 Fujitsu Ltd Display unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5657083A (en) * 1979-10-15 1981-05-19 Suwa Seikosha Kk Liquid crystal display unit
JPS56122089A (en) * 1980-02-29 1981-09-25 Fujitsu Ltd Display unit

Also Published As

Publication number Publication date
JPS6335108B2 (en) 1988-07-13

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