JPS5731168A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5731168A JPS5731168A JP10611080A JP10611080A JPS5731168A JP S5731168 A JPS5731168 A JP S5731168A JP 10611080 A JP10611080 A JP 10611080A JP 10611080 A JP10611080 A JP 10611080A JP S5731168 A JPS5731168 A JP S5731168A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- cost
- insulating film
- picture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 abstract 2
- 230000003014 reinforcing effect Effects 0.000 abstract 2
- 210000002858 crystal cell Anatomy 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the cost of a picture display device, by a method wherein many picture units, each one of which consists of a plurality of picture elements, are gathered and bonded on a reinforcing board and the utilization factor of a semiconductor wafer is improved. CONSTITUTION:An aperture is made in a drain-video wire 20 in a picture element 26, an electrode 22 is added and a poly-Si gate-gate wire 23 are provided. A plurality of the picture elements 26 are gathered and a unit 27 is composed. On the back of the unit a metal layer 32 is placed and bonded to a reinforcing board 34, holding a resin layer 33 in between, by being compressed against a supporting base 28 under pressurized heating process. After being removed from the base 28, the units are covered with an insulating film 36, a video wire is produced by providing a drain electrode 38 and a metal wiring 39, a gate wiring 41 is provided in such a manner that it is connected to the gate electrode 23 through an interlayer insulating film 39 and a metal reflection electrode 44 is provided in such a manner that it is connected to the metal electrode 24 through an interlayer insulating film 42. Finally, as usual, a liquid crystal cell is completed by filling liquid crystal 13 between the reflection electrode 44 and a glass plate 15 on which a transparent electrode 14 is prepared. Thus by introducing the unit into high cost wafer processing, the cost of the chip, and therefore the cost of the device, is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10611080A JPS5731168A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10611080A JPS5731168A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5731168A true JPS5731168A (en) | 1982-02-19 |
JPS6335108B2 JPS6335108B2 (en) | 1988-07-13 |
Family
ID=14425330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10611080A Granted JPS5731168A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731168A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657083A (en) * | 1979-10-15 | 1981-05-19 | Suwa Seikosha Kk | Liquid crystal display unit |
JPS56122089A (en) * | 1980-02-29 | 1981-09-25 | Fujitsu Ltd | Display unit |
-
1980
- 1980-07-31 JP JP10611080A patent/JPS5731168A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657083A (en) * | 1979-10-15 | 1981-05-19 | Suwa Seikosha Kk | Liquid crystal display unit |
JPS56122089A (en) * | 1980-02-29 | 1981-09-25 | Fujitsu Ltd | Display unit |
Also Published As
Publication number | Publication date |
---|---|
JPS6335108B2 (en) | 1988-07-13 |
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