JPS6452130A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPS6452130A
JPS6452130A JP62208171A JP20817187A JPS6452130A JP S6452130 A JPS6452130 A JP S6452130A JP 62208171 A JP62208171 A JP 62208171A JP 20817187 A JP20817187 A JP 20817187A JP S6452130 A JPS6452130 A JP S6452130A
Authority
JP
Japan
Prior art keywords
additive
electrodes
semiconductor film
thin semiconductor
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62208171A
Other languages
Japanese (ja)
Inventor
Hisao Toeda
Koji Suzuki
Masahiko Akiyama
Hiroshi Otaguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62208171A priority Critical patent/JPS6452130A/en
Publication of JPS6452130A publication Critical patent/JPS6452130A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To eliminate the defects of short circuits in a liquid crystal display device by pinholes, etc., by providing a thin semiconductor film layer to the parts where additive electrodes and additive wirings intersect. CONSTITUTION:The gate lines (additive wirings) 2 and the insulating layer 6 are provided on an insulating substrate 1. Picture element electrodes 4, the thin semiconductor film layer 5, and an impurity diffused layer 9 are provided thereon. The picture element electrodes 4 and the gate wires (additive wirings) 2 thereon are made into the bridged structure by connecting the same with additive electrodes 10 to additive capacity part 11, by which the liquid crystal display device is constituted. The thin semiconductor film layer 5 which is the same as a thin semiconductor film transistor is provided on the additive capacity parts 11 where the additive electrodes 10 and the gate lines (additive wirings) 2 intersect to prevent the short circuit between the electrodes by the pinholes. Since the thin semiconductor film layer is provided on the additive capacity parts, the defects of the short circuits to be caused by the pinholes are decreased.
JP62208171A 1987-08-24 1987-08-24 Liquid crystal display device Pending JPS6452130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208171A JPS6452130A (en) 1987-08-24 1987-08-24 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208171A JPS6452130A (en) 1987-08-24 1987-08-24 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPS6452130A true JPS6452130A (en) 1989-02-28

Family

ID=16551835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208171A Pending JPS6452130A (en) 1987-08-24 1987-08-24 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPS6452130A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614730A (en) * 1990-11-09 1997-03-25 Seiko Epson Corporation Active matrix substrate
US6195140B1 (en) * 1997-07-28 2001-02-27 Sharp Kabushiki Kaisha Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region
US6330047B1 (en) 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same
JP2015200901A (en) * 2005-01-31 2015-11-12 株式会社半導体エネルギー研究所 display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614730A (en) * 1990-11-09 1997-03-25 Seiko Epson Corporation Active matrix substrate
US6195140B1 (en) * 1997-07-28 2001-02-27 Sharp Kabushiki Kaisha Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region
US6330047B1 (en) 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same
US6452654B2 (en) 1997-07-28 2002-09-17 Sharp Kabushiki Kaisha Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region
JP2015200901A (en) * 2005-01-31 2015-11-12 株式会社半導体エネルギー研究所 display device
JP2016177305A (en) * 2005-01-31 2016-10-06 株式会社半導体エネルギー研究所 Display device
US9613988B2 (en) 2005-01-31 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Display device having narrower wiring regions
US10573705B2 (en) 2005-01-31 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device with defective pixel correction
US10700156B2 (en) 2005-01-31 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US11362165B2 (en) 2005-01-31 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device
US11910676B2 (en) 2005-01-31 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Display device

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