JPS5728222A - Optical detector - Google Patents
Optical detectorInfo
- Publication number
- JPS5728222A JPS5728222A JP10395580A JP10395580A JPS5728222A JP S5728222 A JPS5728222 A JP S5728222A JP 10395580 A JP10395580 A JP 10395580A JP 10395580 A JP10395580 A JP 10395580A JP S5728222 A JPS5728222 A JP S5728222A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- substrate
- cavity
- films
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
Landscapes
- Radiation Pyrometers (AREA)
Abstract
PURPOSE:To contrive to manufacture a product with higher sensitivity and higher response time by preparing a hot junction on a cavity in the upper layer part and a cold junction on a part except a part on the cavity on a substrate that comprises the upper layer part an insulator having grooves and the under part layer having a cavity formed by a material different from said marerial. CONSTITUTION:On substrate having an insulating film of an order of 1mum, for example, on an Si substrate 1 having an SiO2 film 10, grooves 11 that extend to a cavity 2 and the Si substrate 1 are prepared. On the SiO2 layer 10, belt-shaped rows 12a, 12b of thin film of copper suboxide and titanium oxide are formed on the peripheral part of the grooves 11, one end of each being located on the SiO2 films 10a, 10a' and the other end on the SiO2 film 10b, 10b'. By sputtering SiO2, films 14a, 14b are formed, and further by preparing windows for hot junctions 15a, 15b and for cool junctions 16a, 16b and by evaporating copper, conductors 13a, 13a', 13b, 13b', for connection and electrode parts 17a, 17b are formed. Gold blacks 19a, 19b for light absorption are evaporated on the upper part of the films 10a, 10a', and lead wires 18a, 18b are led out from the electrode parts 17a, 17b. Hereby, a detector with higher sensitiveity and higher response time is completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10395580A JPS5728222A (en) | 1980-07-29 | 1980-07-29 | Optical detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10395580A JPS5728222A (en) | 1980-07-29 | 1980-07-29 | Optical detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5728222A true JPS5728222A (en) | 1982-02-15 |
Family
ID=14367822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10395580A Pending JPS5728222A (en) | 1980-07-29 | 1980-07-29 | Optical detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5728222A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109084901A (en) * | 2018-07-10 | 2018-12-25 | 深圳市眼景科技有限公司 | A kind of infrared radiation sensor |
-
1980
- 1980-07-29 JP JP10395580A patent/JPS5728222A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109084901A (en) * | 2018-07-10 | 2018-12-25 | 深圳市眼景科技有限公司 | A kind of infrared radiation sensor |
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