JPS5727034A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5727034A JPS5727034A JP10271380A JP10271380A JPS5727034A JP S5727034 A JPS5727034 A JP S5727034A JP 10271380 A JP10271380 A JP 10271380A JP 10271380 A JP10271380 A JP 10271380A JP S5727034 A JPS5727034 A JP S5727034A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- polycrystal
- psg
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To obtain multilayer wiring structure, in which wiring does not short- circuit mutually and which has large dielectric resistance, by forming an insulating film consisting of the three layers of the first insulating film, a thermally oxidized film converted from a polycrystal semiconductor film and a fluidized PSG film on a substrate to which lower wiring is shaped. CONSTITUTION:A field oxide film 2, a gate oxide film 3, N type source and drain regions 4, a gate electrode in polycrystal Si and the lower wiring 5 are shaped to the P type Si substrate 1, and the CVDSiO2 film 6, which is the first insulating film and functions as a stopper for succeeding thermal oxidation, is molded. The polycrystal Si film 7 of the semiconductor film is formed on the film 6, and the PSG film 8 containing phosphorus is furhter shaped. The polycrystal Si film 7 is converted into the thermally oxidized film 70 through heat treatment at 1,000 deg.C while the PSG film 8 is fluidized, and the PSG films on the end sections of the lower wiring 5 are smoothed. Accordingly, a cause of a short circuit among the wiring is removed, and the insulating film among the wiring having large dielectric resistance can be manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10271380A JPS5727034A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10271380A JPS5727034A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5727034A true JPS5727034A (en) | 1982-02-13 |
Family
ID=14334900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10271380A Pending JPS5727034A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5727034A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6261849A (en) * | 1985-09-10 | 1987-03-18 | Shin Meiwa Ind Co Ltd | Top lid fastening device for carrier vehicle |
-
1980
- 1980-07-25 JP JP10271380A patent/JPS5727034A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6261849A (en) * | 1985-09-10 | 1987-03-18 | Shin Meiwa Ind Co Ltd | Top lid fastening device for carrier vehicle |
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