JPS572580A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS572580A
JPS572580A JP7704980A JP7704980A JPS572580A JP S572580 A JPS572580 A JP S572580A JP 7704980 A JP7704980 A JP 7704980A JP 7704980 A JP7704980 A JP 7704980A JP S572580 A JPS572580 A JP S572580A
Authority
JP
Japan
Prior art keywords
layer
type
type layer
limiting
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7704980A
Other languages
English (en)
Other versions
JPS6358381B2 (ja
Inventor
Kunihiro Nakamura
Noboru Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7704980A priority Critical patent/JPS572580A/ja
Publication of JPS572580A publication Critical patent/JPS572580A/ja
Publication of JPS6358381B2 publication Critical patent/JPS6358381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP7704980A 1980-06-05 1980-06-05 Semiconductor device Granted JPS572580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7704980A JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7704980A JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS572580A true JPS572580A (en) 1982-01-07
JPS6358381B2 JPS6358381B2 (ja) 1988-11-15

Family

ID=13622917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7704980A Granted JPS572580A (en) 1980-06-05 1980-06-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS572580A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041302A1 (ja) * 2008-10-06 2010-04-15 株式会社 東芝 抵抗変化メモリ
CN107946349A (zh) * 2016-10-12 2018-04-20 重庆中科渝芯电子有限公司 一种带有外延调制区的半导体装置及其制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041302A1 (ja) * 2008-10-06 2010-04-15 株式会社 東芝 抵抗変化メモリ
US8335102B2 (en) 2008-10-06 2012-12-18 Kabushiki Kaisha Toshiba Resistance change memory
CN107946349A (zh) * 2016-10-12 2018-04-20 重庆中科渝芯电子有限公司 一种带有外延调制区的半导体装置及其制造方法

Also Published As

Publication number Publication date
JPS6358381B2 (ja) 1988-11-15

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