JPS5724542A - Preparation of resin sealed type semiconductor device - Google Patents

Preparation of resin sealed type semiconductor device

Info

Publication number
JPS5724542A
JPS5724542A JP10037280A JP10037280A JPS5724542A JP S5724542 A JPS5724542 A JP S5724542A JP 10037280 A JP10037280 A JP 10037280A JP 10037280 A JP10037280 A JP 10037280A JP S5724542 A JPS5724542 A JP S5724542A
Authority
JP
Japan
Prior art keywords
resin
radiation
plate
radiation plate
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10037280A
Other languages
Japanese (ja)
Inventor
Takashi Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10037280A priority Critical patent/JPS5724542A/en
Publication of JPS5724542A publication Critical patent/JPS5724542A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To obtain a resin sealed type semiconductor device with a flat radiation plate by a method wherein a frame consisting of a lead and a radiation disc is arranged in a resin sealing metal mold in such a way that a radiation plate is bent in the direction opposite to the curvature produced by contraction at the time of the post-curing of the resin. CONSTITUTION:A semiconductor element 34 is mounted on a radiation disc 31 provided with grooves 31a, 31b for attaching leads and coated with junction glazing 36. This radiation plate is arranged on a convex lower metal mold 41 used to compensate the curvature of the radiation disc 31 produced at the time of the post cure and an upper metal mold 42 is placed on the plate. A sealing resin is injected into a space inside the molds and hardened and then the radiation plate is taken out. The radiation plate is bent in the next post-curing process in the direction opposit to the curvature prearranged because of the contraction of the resin, so that the plate becomes flat. By so doing, cracking of the resin layer and the element can be prevented.
JP10037280A 1980-07-22 1980-07-22 Preparation of resin sealed type semiconductor device Pending JPS5724542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10037280A JPS5724542A (en) 1980-07-22 1980-07-22 Preparation of resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10037280A JPS5724542A (en) 1980-07-22 1980-07-22 Preparation of resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5724542A true JPS5724542A (en) 1982-02-09

Family

ID=14272204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10037280A Pending JPS5724542A (en) 1980-07-22 1980-07-22 Preparation of resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724542A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059909A (en) * 2007-08-31 2009-03-19 Sanyo Electric Co Ltd Semiconductor device using metal substrate and electronic equipment
JP2011108699A (en) * 2009-11-13 2011-06-02 Shindengen Electric Mfg Co Ltd Mold for manufacturing semiconductor device, method of manufacturing semiconductor device, and the semiconductor device
JP2014154806A (en) * 2013-02-13 2014-08-25 Fuji Electric Co Ltd Semiconductor device manufacturing method
JP2017011030A (en) * 2015-06-18 2017-01-12 豊田合成株式会社 Method for manufacturing light-emitting device
US10564082B2 (en) 2015-01-27 2020-02-18 National Institute For Materials Science Sensor having porous material or particulate material as receptor layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059909A (en) * 2007-08-31 2009-03-19 Sanyo Electric Co Ltd Semiconductor device using metal substrate and electronic equipment
JP2011108699A (en) * 2009-11-13 2011-06-02 Shindengen Electric Mfg Co Ltd Mold for manufacturing semiconductor device, method of manufacturing semiconductor device, and the semiconductor device
JP2014154806A (en) * 2013-02-13 2014-08-25 Fuji Electric Co Ltd Semiconductor device manufacturing method
US10564082B2 (en) 2015-01-27 2020-02-18 National Institute For Materials Science Sensor having porous material or particulate material as receptor layer
JP2017011030A (en) * 2015-06-18 2017-01-12 豊田合成株式会社 Method for manufacturing light-emitting device

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