JPS5723214A - Writing method for recognition mark on wafer surface - Google Patents

Writing method for recognition mark on wafer surface

Info

Publication number
JPS5723214A
JPS5723214A JP9841080A JP9841080A JPS5723214A JP S5723214 A JPS5723214 A JP S5723214A JP 9841080 A JP9841080 A JP 9841080A JP 9841080 A JP9841080 A JP 9841080A JP S5723214 A JPS5723214 A JP S5723214A
Authority
JP
Japan
Prior art keywords
section
recognition mark
concaved
wafer surface
writing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9841080A
Other languages
Japanese (ja)
Other versions
JPS6255686B2 (en
Inventor
Shunji Kumakura
Shoichi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9841080A priority Critical patent/JPS5723214A/en
Publication of JPS5723214A publication Critical patent/JPS5723214A/en
Publication of JPS6255686B2 publication Critical patent/JPS6255686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

PURPOSE:To prevent an erroneous irradiation when an exposure is performed and to unnecessitate a renumbering work which will be conducted after a grinding process by a method wherein a concaved section is partially formed on a wafer and a desired recognition mark is written inside the concaved section. CONSTITUTION:The concaved section 16 is formed by providing a notch on the circumference on the reverse side of the wafer 11 deeper than the section to be ground 15. No adverse effect, due to the projection formed when the recognition mark is written, is generated when the numbering is done in the concaved section 16. Also, no adverse effect is incurred to the recognition mark in the concaved section 16 even when a grinding work is finished on the section to be ground 15 in the subsequent process.
JP9841080A 1980-07-18 1980-07-18 Writing method for recognition mark on wafer surface Granted JPS5723214A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9841080A JPS5723214A (en) 1980-07-18 1980-07-18 Writing method for recognition mark on wafer surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9841080A JPS5723214A (en) 1980-07-18 1980-07-18 Writing method for recognition mark on wafer surface

Publications (2)

Publication Number Publication Date
JPS5723214A true JPS5723214A (en) 1982-02-06
JPS6255686B2 JPS6255686B2 (en) 1987-11-20

Family

ID=14219054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9841080A Granted JPS5723214A (en) 1980-07-18 1980-07-18 Writing method for recognition mark on wafer surface

Country Status (1)

Country Link
JP (1) JPS5723214A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169924A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Test device for ic wafer
JPS60263841A (en) * 1984-06-12 1985-12-27 Rigaku Denki Kk X-ray diffraction instrument for thin film sample

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5253668A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Production of semiconductor device
JPS5311958U (en) * 1976-07-13 1978-01-31

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5311958B2 (en) * 1974-02-08 1978-04-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5253668A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Production of semiconductor device
JPS5311958U (en) * 1976-07-13 1978-01-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169924A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Test device for ic wafer
JPS60263841A (en) * 1984-06-12 1985-12-27 Rigaku Denki Kk X-ray diffraction instrument for thin film sample
JPH0254496B2 (en) * 1984-06-12 1990-11-21 Rigaku Denki Co Ltd

Also Published As

Publication number Publication date
JPS6255686B2 (en) 1987-11-20

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