JPS57211725A - Liquid epitaxial growth method - Google Patents

Liquid epitaxial growth method

Info

Publication number
JPS57211725A
JPS57211725A JP56097739A JP9773981A JPS57211725A JP S57211725 A JPS57211725 A JP S57211725A JP 56097739 A JP56097739 A JP 56097739A JP 9773981 A JP9773981 A JP 9773981A JP S57211725 A JPS57211725 A JP S57211725A
Authority
JP
Japan
Prior art keywords
tube
substrate
layer
growth
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56097739A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6316902B2 (enrdf_load_stackoverflow
Inventor
Michiharu Ito
Mitsuo Yoshikawa
Takeshi Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56097739A priority Critical patent/JPS57211725A/ja
Publication of JPS57211725A publication Critical patent/JPS57211725A/ja
Publication of JPS6316902B2 publication Critical patent/JPS6316902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56097739A 1981-06-23 1981-06-23 Liquid epitaxial growth method Granted JPS57211725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56097739A JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56097739A JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57211725A true JPS57211725A (en) 1982-12-25
JPS6316902B2 JPS6316902B2 (enrdf_load_stackoverflow) 1988-04-11

Family

ID=14200259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56097739A Granted JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57211725A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872943A (en) * 1987-06-16 1989-10-10 Selenia Industrie Elettroniche Associate S.P.A. Process for making monocrystalline HGCDTE layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872943A (en) * 1987-06-16 1989-10-10 Selenia Industrie Elettroniche Associate S.P.A. Process for making monocrystalline HGCDTE layers

Also Published As

Publication number Publication date
JPS6316902B2 (enrdf_load_stackoverflow) 1988-04-11

Similar Documents

Publication Publication Date Title
CA1071068A (en) Method of manufacturing single crystals by growth from the vapour phase
SG77166A1 (en) Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate
JPS60251191A (ja) 高解離圧化合物単結晶成長方法
JPS57211725A (en) Liquid epitaxial growth method
US4251299A (en) Planar epitaxial refill using liquid phase epitaxy
JPS59207622A (ja) 半導体薄膜気相成長装置
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPS5649520A (en) Vapor growth of compound semiconductor
JPS54102295A (en) Epitaxial crowth method
Cullen The preparation and properties of heteroepitaxial silicon
JPS5469062A (en) Vapor growth method for magnespinel
JPS57205395A (en) Manufacture of crystal substrate
JPS54152465A (en) Manufacture of epitaxial wafer
JPS5748227A (en) Manufacture of semiconductor device
JPS54121283A (en) Manufacture of silicon single crystal by pulling method and apparatus therefor
MD626G2 (ro) Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS
JPS5788099A (en) Vapor phase growing method for compound semiconductor
JPS55149193A (en) Manufacture of silicon carbide substrate
JPS53142929A (en) Epitaxial low temperature growth method for silicon
JPS6446917A (en) Chemical vapor growth device
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor
JPS54121284A (en) Menufacture of silicon single crystal by pulling method
JPS5435898A (en) Growing method for rare earth element gallium garnet single crystal
JPS57190316A (en) Manufacture of compound semiconductor device