JPS6316902B2 - - Google Patents

Info

Publication number
JPS6316902B2
JPS6316902B2 JP56097739A JP9773981A JPS6316902B2 JP S6316902 B2 JPS6316902 B2 JP S6316902B2 JP 56097739 A JP56097739 A JP 56097739A JP 9773981 A JP9773981 A JP 9773981A JP S6316902 B2 JPS6316902 B2 JP S6316902B2
Authority
JP
Japan
Prior art keywords
liquid phase
growth
epitaxial growth
temperature
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56097739A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57211725A (en
Inventor
Michiharu Ito
Mitsuo Yoshikawa
Takeshi Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56097739A priority Critical patent/JPS57211725A/ja
Publication of JPS57211725A publication Critical patent/JPS57211725A/ja
Publication of JPS6316902B2 publication Critical patent/JPS6316902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56097739A 1981-06-23 1981-06-23 Liquid epitaxial growth method Granted JPS57211725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56097739A JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56097739A JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57211725A JPS57211725A (en) 1982-12-25
JPS6316902B2 true JPS6316902B2 (enrdf_load_stackoverflow) 1988-04-11

Family

ID=14200259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56097739A Granted JPS57211725A (en) 1981-06-23 1981-06-23 Liquid epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57211725A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1210812B (it) * 1987-06-16 1989-09-29 Selenia Ind Elettroniche Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio

Also Published As

Publication number Publication date
JPS57211725A (en) 1982-12-25

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