IT1210812B - Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio - Google Patents
Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurioInfo
- Publication number
- IT1210812B IT1210812B IT8767519A IT6751987A IT1210812B IT 1210812 B IT1210812 B IT 1210812B IT 8767519 A IT8767519 A IT 8767519A IT 6751987 A IT6751987 A IT 6751987A IT 1210812 B IT1210812 B IT 1210812B
- Authority
- IT
- Italy
- Prior art keywords
- cadmium
- procedure
- manufacture
- mercury telluride
- monocrystalline layers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/101—Liquid Phase Epitaxy, LPE
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8767519A IT1210812B (it) | 1987-06-16 | 1987-06-16 | Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
EP88109560A EP0295659B1 (en) | 1987-06-16 | 1988-06-15 | Process for making single-crystal mercury cadmium telluride layers |
DE198888109560T DE295659T1 (de) | 1987-06-16 | 1988-06-15 | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. |
US07/207,259 US4872943A (en) | 1987-06-16 | 1988-06-15 | Process for making monocrystalline HGCDTE layers |
DE8888109560T DE3860551D1 (de) | 1987-06-16 | 1988-06-15 | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8767519A IT1210812B (it) | 1987-06-16 | 1987-06-16 | Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8767519A0 IT8767519A0 (it) | 1987-06-16 |
IT1210812B true IT1210812B (it) | 1989-09-29 |
Family
ID=11303113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8767519A IT1210812B (it) | 1987-06-16 | 1987-06-16 | Procedimento per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
Country Status (4)
Country | Link |
---|---|
US (1) | US4872943A (it) |
EP (1) | EP0295659B1 (it) |
DE (2) | DE3860551D1 (it) |
IT (1) | IT1210812B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH042689A (ja) * | 1990-04-19 | 1992-01-07 | Mitsubishi Electric Corp | ヘテロエピタキシャル液相成長方法 |
US5264190A (en) * | 1990-04-19 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Liquid phase epitaxial film growth apparatus |
CA2649322C (en) | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
CN114551642B (zh) * | 2022-02-10 | 2023-09-12 | 中国科学院上海技术物理研究所 | 一种弱p型碲镉汞材料的退火方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725135A (en) * | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
US3902924A (en) * | 1973-08-30 | 1975-09-02 | Honeywell Inc | Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof |
US4344476A (en) * | 1979-08-30 | 1982-08-17 | Santa Barbara Research Center | Supercool method for producing single crystal mercury cadmium telluride |
US4315477A (en) * | 1980-03-24 | 1982-02-16 | Rockwell International Corporation | Semi-open liquid phase epitaxial growth system |
US4317689A (en) * | 1980-07-18 | 1982-03-02 | Honeywell Inc. | Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution |
JPS57211725A (en) * | 1981-06-23 | 1982-12-25 | Fujitsu Ltd | Liquid epitaxial growth method |
US4642142A (en) * | 1982-05-19 | 1987-02-10 | Massachusetts Institute Of Technology | Process for making mercury cadmium telluride |
GB2132228B (en) * | 1982-12-22 | 1985-09-04 | Philips Electronic Associated | Producing a controlled unsaturated vapour pressure of a volatile liquid in a heat treatment chamber |
-
1987
- 1987-06-16 IT IT8767519A patent/IT1210812B/it active
-
1988
- 1988-06-15 DE DE8888109560T patent/DE3860551D1/de not_active Expired - Fee Related
- 1988-06-15 EP EP88109560A patent/EP0295659B1/en not_active Expired - Lifetime
- 1988-06-15 US US07/207,259 patent/US4872943A/en not_active Expired - Fee Related
- 1988-06-15 DE DE198888109560T patent/DE295659T1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
IT8767519A0 (it) | 1987-06-16 |
EP0295659A1 (en) | 1988-12-21 |
EP0295659B1 (en) | 1990-09-05 |
DE295659T1 (de) | 1989-10-05 |
DE3860551D1 (de) | 1990-10-11 |
US4872943A (en) | 1989-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19940628 |