IT1211385B - Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio - Google Patents
Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurioInfo
- Publication number
- IT1211385B IT1211385B IT8767842A IT6784287A IT1211385B IT 1211385 B IT1211385 B IT 1211385B IT 8767842 A IT8767842 A IT 8767842A IT 6784287 A IT6784287 A IT 6784287A IT 1211385 B IT1211385 B IT 1211385B
- Authority
- IT
- Italy
- Prior art keywords
- cadmium
- manufacture
- mercury telluride
- monocrystalline layers
- monocrystalline
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8767842A IT1211385B (it) | 1987-10-06 | 1987-10-06 | Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
JP63249170A JPH01197399A (ja) | 1987-10-06 | 1988-10-04 | 単結晶テルル化カドミウム水銀層を作製する方法 |
DE8888116463T DE3872644T2 (de) | 1987-10-06 | 1988-10-05 | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. |
US07/254,380 US4906325A (en) | 1987-10-06 | 1988-10-05 | Method of making single-crystal mercury cadmium telluride layers |
CA000579336A CA1319588C (en) | 1987-10-06 | 1988-10-05 | Method of making single-crystal mercury cadmium telluride layers |
DE198888116463T DE311038T1 (de) | 1987-10-06 | 1988-10-05 | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. |
EP88116463A EP0311038B1 (en) | 1987-10-06 | 1988-10-05 | Process for making single-crystal mercury cadmium telluride layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8767842A IT1211385B (it) | 1987-10-06 | 1987-10-06 | Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8767842A0 IT8767842A0 (it) | 1987-10-06 |
IT1211385B true IT1211385B (it) | 1989-10-18 |
Family
ID=11305723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8767842A IT1211385B (it) | 1987-10-06 | 1987-10-06 | Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio |
Country Status (6)
Country | Link |
---|---|
US (1) | US4906325A (it) |
EP (1) | EP0311038B1 (it) |
JP (1) | JPH01197399A (it) |
CA (1) | CA1319588C (it) |
DE (2) | DE3872644T2 (it) |
IT (1) | IT1211385B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2754765B2 (ja) * | 1989-07-19 | 1998-05-20 | 富士通株式会社 | 化合物半導体結晶の製造方法 |
JPH042689A (ja) * | 1990-04-19 | 1992-01-07 | Mitsubishi Electric Corp | ヘテロエピタキシャル液相成長方法 |
US5264190A (en) * | 1990-04-19 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Liquid phase epitaxial film growth apparatus |
US5512511A (en) * | 1994-05-24 | 1996-04-30 | Santa Barbara Research Center | Process for growing HgCdTe base and contact layer in one operation |
US6902619B2 (en) * | 2001-06-28 | 2005-06-07 | Ntu Ventures Pte. Ltd. | Liquid phase epitaxy |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
CN102677162A (zh) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | 一种全自动控制的液相外延设备及控制方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4642142A (en) * | 1982-05-19 | 1987-02-10 | Massachusetts Institute Of Technology | Process for making mercury cadmium telluride |
-
1987
- 1987-10-06 IT IT8767842A patent/IT1211385B/it active
-
1988
- 1988-10-04 JP JP63249170A patent/JPH01197399A/ja active Granted
- 1988-10-05 CA CA000579336A patent/CA1319588C/en not_active Expired - Fee Related
- 1988-10-05 US US07/254,380 patent/US4906325A/en not_active Expired - Fee Related
- 1988-10-05 DE DE8888116463T patent/DE3872644T2/de not_active Expired - Fee Related
- 1988-10-05 DE DE198888116463T patent/DE311038T1/de active Pending
- 1988-10-05 EP EP88116463A patent/EP0311038B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0311038A1 (en) | 1989-04-12 |
JPH0478598B2 (it) | 1992-12-11 |
DE3872644T2 (de) | 1993-03-25 |
EP0311038B1 (en) | 1992-07-08 |
US4906325A (en) | 1990-03-06 |
CA1319588C (en) | 1993-06-29 |
DE311038T1 (de) | 1989-10-05 |
IT8767842A0 (it) | 1987-10-06 |
JPH01197399A (ja) | 1989-08-09 |
DE3872644D1 (de) | 1992-08-13 |
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Legal Events
Date | Code | Title | Description |
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970128 |