JPS57211572A - Znwo4 and cdwo4 scintillator - Google Patents

Znwo4 and cdwo4 scintillator

Info

Publication number
JPS57211572A
JPS57211572A JP9649781A JP9649781A JPS57211572A JP S57211572 A JPS57211572 A JP S57211572A JP 9649781 A JP9649781 A JP 9649781A JP 9649781 A JP9649781 A JP 9649781A JP S57211572 A JPS57211572 A JP S57211572A
Authority
JP
Japan
Prior art keywords
cut
plane
crack
scintillator
cleavage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9649781A
Other languages
Japanese (ja)
Other versions
JPH0227313B2 (en
Inventor
Kazumasa Takagi
Tokumi Fukazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP9649781A priority Critical patent/JPH0227313B2/en
Publication of JPS57211572A publication Critical patent/JPS57211572A/en
Publication of JPH0227313B2 publication Critical patent/JPH0227313B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To manufacture a scintillator with an improved yeild through reduction in chipping-off and crack, by a method wherein a rectangular parallelopiped single crystal of ZnWO4 and CdWO4, or the mixture composition of both is cut so that it has a given plane of cleaveage and 4 rectangular side faces. CONSTITUTION:In case a scintillator is formed with a rectangular parallelopiped single crystal of ZnWO4 and CdWO4, or the mixture composition of both, a face 1, making contact with a photoelectric coverting element, is formed into a cloven plane (010) which is easy to grind it into a mirror surface. In case it is cut by a diamond cutter in order to decrease a crack 2 produced in the sides due to cleavage, the plane (010) of the single crystal is cut in cleavage, and provided the plane serves as the surface 1, a short side is cut in a direction inclining toward parallel with a plane (102) so that normal lines of 4 sides perpendicular to the surface 1 are situated within a region A ranging within 30 deg. from (100) axis (a) and (001) axis (c). Then, after a block, in which a long side is cut in a direction of arrow marks, is cut out, a (110) side is cloven in a thickness of about 3mm., a rectangular parallelopiped for scintillator, which measures 25X 5X3mm.<3>, is cut out, and the (110) side is ground to obtain a sciintllator, which is prevented from the production of crack or cleavage crack 2, with an improved yield.
JP9649781A 1981-06-24 1981-06-24 ZNWO4OYOBICDWO4SHINCHIREETA Expired - Lifetime JPH0227313B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9649781A JPH0227313B2 (en) 1981-06-24 1981-06-24 ZNWO4OYOBICDWO4SHINCHIREETA

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9649781A JPH0227313B2 (en) 1981-06-24 1981-06-24 ZNWO4OYOBICDWO4SHINCHIREETA

Publications (2)

Publication Number Publication Date
JPS57211572A true JPS57211572A (en) 1982-12-25
JPH0227313B2 JPH0227313B2 (en) 1990-06-15

Family

ID=14166724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9649781A Expired - Lifetime JPH0227313B2 (en) 1981-06-24 1981-06-24 ZNWO4OYOBICDWO4SHINCHIREETA

Country Status (1)

Country Link
JP (1) JPH0227313B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0128659A1 (en) * 1983-05-10 1984-12-19 Kabushiki Kaisha Toshiba A method of forming individual scintillator elements
CN102336440A (en) * 2011-06-28 2012-02-01 福州大学 Method for preparing high-purity and monoclinic-phase ZnWo4 nano particle and application thereof
JP2013501929A (en) * 2009-08-10 2013-01-17 ナシヨナル・ニユークリア・ラボラトリー・リミテツド New radiation detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0128659A1 (en) * 1983-05-10 1984-12-19 Kabushiki Kaisha Toshiba A method of forming individual scintillator elements
JP2013501929A (en) * 2009-08-10 2013-01-17 ナシヨナル・ニユークリア・ラボラトリー・リミテツド New radiation detector
CN102336440A (en) * 2011-06-28 2012-02-01 福州大学 Method for preparing high-purity and monoclinic-phase ZnWo4 nano particle and application thereof

Also Published As

Publication number Publication date
JPH0227313B2 (en) 1990-06-15

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