JPS6485712A - Dicing method of semiconductor - Google Patents

Dicing method of semiconductor

Info

Publication number
JPS6485712A
JPS6485712A JP24452687A JP24452687A JPS6485712A JP S6485712 A JPS6485712 A JP S6485712A JP 24452687 A JP24452687 A JP 24452687A JP 24452687 A JP24452687 A JP 24452687A JP S6485712 A JPS6485712 A JP S6485712A
Authority
JP
Japan
Prior art keywords
cutting
blade
shaped groove
dicing
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24452687A
Other languages
Japanese (ja)
Inventor
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24452687A priority Critical patent/JPS6485712A/en
Publication of JPS6485712A publication Critical patent/JPS6485712A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve reliability by preventing a crack at an end part of a pellet and progress of the crack or a flaw in a process after that, by a method wherein cutting is performed to a predetermined depth of the surface of a wafer in a vertical direction of the same by performing registration to a V-shaped groove part by using a diamond blade and a cut sectional form is made of Y-shaped type. CONSTITUTION:A V-shaped groove is formed by cutting the central part of a dicing sphere 2 deeply into a predetermined depth with a diamond blade 5 having an arbitrary angle (45-120 deg.) at the tip. As an angle of a crack of an end part of a pellet is determined by kind of a crystal and oventation, a tip angle of the diamond blade 5 is decided in conformity with them. Then cutting is performed deeply into the predetermined depth by registering to the center of the V-shaped groove by using a thin diamond blade 6. A depth of the groove to be formed with the blade 5 is set up so that width 7 of the upper part of the V-shaped groove becomes narrower than a width of the dicing sphere 2 and wider than a notched width 8 to be obtained by cutting with the blade 6. A cut sectional form obtained by rounding off only a surface part of the pellet can be made a Y-shaped type by performing dicing like this.
JP24452687A 1987-09-28 1987-09-28 Dicing method of semiconductor Pending JPS6485712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24452687A JPS6485712A (en) 1987-09-28 1987-09-28 Dicing method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24452687A JPS6485712A (en) 1987-09-28 1987-09-28 Dicing method of semiconductor

Publications (1)

Publication Number Publication Date
JPS6485712A true JPS6485712A (en) 1989-03-30

Family

ID=17119999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24452687A Pending JPS6485712A (en) 1987-09-28 1987-09-28 Dicing method of semiconductor

Country Status (1)

Country Link
JP (1) JPS6485712A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574932A (en) * 1991-09-17 1993-03-26 Fujitsu Ltd Dicing method for semiconductor wafer
WO2003003445A1 (en) * 2001-06-29 2003-01-09 Fujitsu Limited Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip
JP2004031844A (en) * 2002-06-28 2004-01-29 Sony Corp Method of manufacturing semiconductor chip and manufacturing apparatus for semiconductor chip
JP2009076950A (en) * 2009-01-15 2009-04-09 Renesas Technology Corp Method for manufacturing semiconductor device
JP2010125488A (en) * 2008-11-28 2010-06-10 Apic Yamada Corp Cutting apparatus
US7923297B2 (en) 2006-01-20 2011-04-12 Renesas Electronics Corporation Manufacturing method of semiconductor device
CN107127899A (en) * 2016-02-26 2017-09-05 三星钻石工业股份有限公司 The dividing method of brittle base

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574932A (en) * 1991-09-17 1993-03-26 Fujitsu Ltd Dicing method for semiconductor wafer
WO2003003445A1 (en) * 2001-06-29 2003-01-09 Fujitsu Limited Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip
JP4778667B2 (en) * 2001-06-29 2011-09-21 富士通株式会社 Sheet material for underfill, semiconductor chip underfill method, and semiconductor chip mounting method
JP2004031844A (en) * 2002-06-28 2004-01-29 Sony Corp Method of manufacturing semiconductor chip and manufacturing apparatus for semiconductor chip
US7923297B2 (en) 2006-01-20 2011-04-12 Renesas Electronics Corporation Manufacturing method of semiconductor device
JP2010125488A (en) * 2008-11-28 2010-06-10 Apic Yamada Corp Cutting apparatus
JP2009076950A (en) * 2009-01-15 2009-04-09 Renesas Technology Corp Method for manufacturing semiconductor device
CN107127899A (en) * 2016-02-26 2017-09-05 三星钻石工业股份有限公司 The dividing method of brittle base

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