JPS6485712A - Dicing method of semiconductor - Google Patents
Dicing method of semiconductorInfo
- Publication number
- JPS6485712A JPS6485712A JP24452687A JP24452687A JPS6485712A JP S6485712 A JPS6485712 A JP S6485712A JP 24452687 A JP24452687 A JP 24452687A JP 24452687 A JP24452687 A JP 24452687A JP S6485712 A JPS6485712 A JP S6485712A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- blade
- shaped groove
- dicing
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve reliability by preventing a crack at an end part of a pellet and progress of the crack or a flaw in a process after that, by a method wherein cutting is performed to a predetermined depth of the surface of a wafer in a vertical direction of the same by performing registration to a V-shaped groove part by using a diamond blade and a cut sectional form is made of Y-shaped type. CONSTITUTION:A V-shaped groove is formed by cutting the central part of a dicing sphere 2 deeply into a predetermined depth with a diamond blade 5 having an arbitrary angle (45-120 deg.) at the tip. As an angle of a crack of an end part of a pellet is determined by kind of a crystal and oventation, a tip angle of the diamond blade 5 is decided in conformity with them. Then cutting is performed deeply into the predetermined depth by registering to the center of the V-shaped groove by using a thin diamond blade 6. A depth of the groove to be formed with the blade 5 is set up so that width 7 of the upper part of the V-shaped groove becomes narrower than a width of the dicing sphere 2 and wider than a notched width 8 to be obtained by cutting with the blade 6. A cut sectional form obtained by rounding off only a surface part of the pellet can be made a Y-shaped type by performing dicing like this.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24452687A JPS6485712A (en) | 1987-09-28 | 1987-09-28 | Dicing method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24452687A JPS6485712A (en) | 1987-09-28 | 1987-09-28 | Dicing method of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6485712A true JPS6485712A (en) | 1989-03-30 |
Family
ID=17119999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24452687A Pending JPS6485712A (en) | 1987-09-28 | 1987-09-28 | Dicing method of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6485712A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574932A (en) * | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | Dicing method for semiconductor wafer |
WO2003003445A1 (en) * | 2001-06-29 | 2003-01-09 | Fujitsu Limited | Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip |
JP2004031844A (en) * | 2002-06-28 | 2004-01-29 | Sony Corp | Method of manufacturing semiconductor chip and manufacturing apparatus for semiconductor chip |
JP2009076950A (en) * | 2009-01-15 | 2009-04-09 | Renesas Technology Corp | Method for manufacturing semiconductor device |
JP2010125488A (en) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | Cutting apparatus |
US7923297B2 (en) | 2006-01-20 | 2011-04-12 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
CN107127899A (en) * | 2016-02-26 | 2017-09-05 | 三星钻石工业股份有限公司 | The dividing method of brittle base |
-
1987
- 1987-09-28 JP JP24452687A patent/JPS6485712A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574932A (en) * | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | Dicing method for semiconductor wafer |
WO2003003445A1 (en) * | 2001-06-29 | 2003-01-09 | Fujitsu Limited | Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip |
JP4778667B2 (en) * | 2001-06-29 | 2011-09-21 | 富士通株式会社 | Sheet material for underfill, semiconductor chip underfill method, and semiconductor chip mounting method |
JP2004031844A (en) * | 2002-06-28 | 2004-01-29 | Sony Corp | Method of manufacturing semiconductor chip and manufacturing apparatus for semiconductor chip |
US7923297B2 (en) | 2006-01-20 | 2011-04-12 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
JP2010125488A (en) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | Cutting apparatus |
JP2009076950A (en) * | 2009-01-15 | 2009-04-09 | Renesas Technology Corp | Method for manufacturing semiconductor device |
CN107127899A (en) * | 2016-02-26 | 2017-09-05 | 三星钻石工业股份有限公司 | The dividing method of brittle base |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6470695A (en) | Manufacture of image sensing element chip used for long-sized scanning array | |
JPH04276645A (en) | Dicing method of compound semiconductor wafer | |
JPS6485712A (en) | Dicing method of semiconductor | |
GB1509747A (en) | Method of and apparatus for cleaving building slabs | |
JPH01191425A (en) | Semiconductor crystal mounting beam and method of slicing | |
US2846626A (en) | Junction transistors and methods of forming them | |
US5962915A (en) | Single crystal wafers and a method of preparation thereof | |
JPS566451A (en) | Deviding method of semiconductor device | |
JPS55158984A (en) | Method of forming minute hole | |
JPS6487305A (en) | Method for dicing semiconductor wafer | |
JPH0246716A (en) | Silicon wafer | |
JPS6477118A (en) | Manufacture of ga1-xalxas epitaxial wafer | |
JPS55131745A (en) | Knife for use in supermicrotome | |
JPS56130944A (en) | Diamond cutter | |
JPS56130914A (en) | Manufacture of semiconductor device | |
JPS5613728A (en) | Grinding method for semiconductor wafer | |
JPS5325350A (en) | Dicing method of semiconductor substrates | |
JPS6452924A (en) | Chipping of surface layer of base concrete | |
JPS57128943A (en) | Insulation isolated semiconductor integrated device and manufacture thereof | |
JPS57211572A (en) | Znwo4 and cdwo4 scintillator | |
JPS57127618A (en) | Surface broach | |
JPS57143831A (en) | Process of semiconductor wafer | |
JPS5763844A (en) | Dividing method for semiconductor wafer | |
JPS5542742A (en) | Blade edge grinding method | |
JPS6416303A (en) | Cutting tool insert |