JPS57204160A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57204160A
JPS57204160A JP56089153A JP8915381A JPS57204160A JP S57204160 A JPS57204160 A JP S57204160A JP 56089153 A JP56089153 A JP 56089153A JP 8915381 A JP8915381 A JP 8915381A JP S57204160 A JPS57204160 A JP S57204160A
Authority
JP
Japan
Prior art keywords
layer
polycrystal
oxide film
gate
resists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56089153A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0320908B2 (enrdf_load_stackoverflow
Inventor
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56089153A priority Critical patent/JPS57204160A/ja
Publication of JPS57204160A publication Critical patent/JPS57204160A/ja
Publication of JPH0320908B2 publication Critical patent/JPH0320908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56089153A 1981-06-10 1981-06-10 Manufacture of semiconductor device Granted JPS57204160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56089153A JPS57204160A (en) 1981-06-10 1981-06-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56089153A JPS57204160A (en) 1981-06-10 1981-06-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57204160A true JPS57204160A (en) 1982-12-14
JPH0320908B2 JPH0320908B2 (enrdf_load_stackoverflow) 1991-03-20

Family

ID=13962900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56089153A Granted JPS57204160A (en) 1981-06-10 1981-06-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204160A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196478A (ja) * 2000-01-17 2001-07-19 Mitsubishi Electric Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ
JP2011129936A (ja) * 2011-01-06 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196478A (ja) * 2000-01-17 2001-07-19 Mitsubishi Electric Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ
JP2011129936A (ja) * 2011-01-06 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ

Also Published As

Publication number Publication date
JPH0320908B2 (enrdf_load_stackoverflow) 1991-03-20

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