JPS55156368A - Manufacture of thin-film transistor - Google Patents

Manufacture of thin-film transistor

Info

Publication number
JPS55156368A
JPS55156368A JP6435079A JP6435079A JPS55156368A JP S55156368 A JPS55156368 A JP S55156368A JP 6435079 A JP6435079 A JP 6435079A JP 6435079 A JP6435079 A JP 6435079A JP S55156368 A JPS55156368 A JP S55156368A
Authority
JP
Japan
Prior art keywords
layer
solution
mask
compound
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6435079A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawarada
Haruhiro Shirasawa
Toshio Tatemichi
Isao Oota
Tetsuo Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6435079A priority Critical patent/JPS55156368A/en
Publication of JPS55156368A publication Critical patent/JPS55156368A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a highly fine pattern of Cd-Se compound thin film, by using a solution, obtainable by diluting bromine water with deionized waters, as an ethcing solution for the Cd-Se compound thin film. CONSTITUTION:On a source electrode 2 and a drain electrode 3 on an insulating substrate 1, the Cd-Se compound layer 4' and an aluminum oxide layer 5' are formed in order. On these layers, an etching mask 7 is formed by a photo-resist, the layer 5' is etched and the layer 4' is also etched. Etching of this layer 4' is conducted in such a manner as to soak the substrate 1 in a solution obtained by diluting bromine water with deionized water. This solution is to be prepared not to deteriorate adhesiveness of a mask 7 by a position type photoresist, not to solve the layers 2, 3 and 5' to be brought in contact with the layer 4' and not to cause residue onto the exposed layer 4'. By doing so, it is possible to obtain the Cd-Se compound semiconductor layer 4 having precise pattern dimensions on prescribed sections. And then, a gate electrode 6 is formed after removing the mask 7.
JP6435079A 1979-05-23 1979-05-23 Manufacture of thin-film transistor Pending JPS55156368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6435079A JPS55156368A (en) 1979-05-23 1979-05-23 Manufacture of thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6435079A JPS55156368A (en) 1979-05-23 1979-05-23 Manufacture of thin-film transistor

Publications (1)

Publication Number Publication Date
JPS55156368A true JPS55156368A (en) 1980-12-05

Family

ID=13255698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6435079A Pending JPS55156368A (en) 1979-05-23 1979-05-23 Manufacture of thin-film transistor

Country Status (1)

Country Link
JP (1) JPS55156368A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136972A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Thin-film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326586A (en) * 1976-08-20 1978-03-11 Westinghouse Electric Corp Thin film transistor and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326586A (en) * 1976-08-20 1978-03-11 Westinghouse Electric Corp Thin film transistor and method of producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136972A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Thin-film transistor

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