JPS57202729A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57202729A
JPS57202729A JP8779981A JP8779981A JPS57202729A JP S57202729 A JPS57202729 A JP S57202729A JP 8779981 A JP8779981 A JP 8779981A JP 8779981 A JP8779981 A JP 8779981A JP S57202729 A JPS57202729 A JP S57202729A
Authority
JP
Japan
Prior art keywords
substrate
impurity
stand
shallow
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8779981A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335825B2 (enrdf_load_stackoverflow
Inventor
Tadashi Nishimura
Hideaki Arima
Masahiro Yoneda
Hayaaki Fukumoto
Katsuhiro Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8779981A priority Critical patent/JPS57202729A/ja
Priority to DE19823221180 priority patent/DE3221180A1/de
Priority to US06/385,137 priority patent/US4465529A/en
Publication of JPS57202729A publication Critical patent/JPS57202729A/ja
Publication of JPH0335825B2 publication Critical patent/JPH0335825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP8779981A 1981-06-05 1981-06-05 Manufacture of semiconductor device Granted JPS57202729A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8779981A JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device
DE19823221180 DE3221180A1 (de) 1981-06-05 1982-06-04 Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
US06/385,137 US4465529A (en) 1981-06-05 1982-06-04 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8779981A JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57202729A true JPS57202729A (en) 1982-12-11
JPH0335825B2 JPH0335825B2 (enrdf_load_stackoverflow) 1991-05-29

Family

ID=13925021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8779981A Granted JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202729A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411323A (en) * 1987-07-03 1989-01-13 Sony Corp Semiconductor manufacturing device
JPH02222545A (ja) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JPH02224341A (ja) * 1989-02-27 1990-09-06 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JPH05102055A (ja) * 1991-10-08 1993-04-23 Semiconductor Energy Lab Co Ltd 半導体作製方法
US5938839A (en) * 1991-10-04 1999-08-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
WO2002047138A1 (en) * 2000-12-07 2002-06-13 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
KR100464653B1 (ko) * 2002-12-09 2005-01-03 주식회사 하이닉스반도체 유전장벽 방전 플라즈마 소오스를 이용한 전자빔 큐어링장비
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411323A (en) * 1987-07-03 1989-01-13 Sony Corp Semiconductor manufacturing device
JPH02222545A (ja) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JPH02224341A (ja) * 1989-02-27 1990-09-06 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
US6660575B1 (en) 1991-10-04 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5938839A (en) * 1991-10-04 1999-08-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6919239B2 (en) 1991-10-04 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
JPH05102055A (ja) * 1991-10-08 1993-04-23 Semiconductor Energy Lab Co Ltd 半導体作製方法
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2002176003A (ja) * 2000-12-07 2002-06-21 Sony Corp 半導体層のドーピング方法、薄膜半導体素子の製造方法、及び薄膜半導体素子
WO2002047138A1 (en) * 2000-12-07 2002-06-13 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
US6984552B2 (en) 2000-12-07 2006-01-10 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
KR100863446B1 (ko) 2000-12-07 2008-10-16 소니 가부시끼 가이샤 반도체층의 도핑방법, 박막 반도체 소자의 제조방법, 및박막 반도체 소자
KR100464653B1 (ko) * 2002-12-09 2005-01-03 주식회사 하이닉스반도체 유전장벽 방전 플라즈마 소오스를 이용한 전자빔 큐어링장비

Also Published As

Publication number Publication date
JPH0335825B2 (enrdf_load_stackoverflow) 1991-05-29

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