JPS57198677A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS57198677A
JPS57198677A JP8262681A JP8262681A JPS57198677A JP S57198677 A JPS57198677 A JP S57198677A JP 8262681 A JP8262681 A JP 8262681A JP 8262681 A JP8262681 A JP 8262681A JP S57198677 A JPS57198677 A JP S57198677A
Authority
JP
Japan
Prior art keywords
layer
type
providing
ingaasp
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8262681A
Other languages
English (en)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8262681A priority Critical patent/JPS57198677A/ja
Publication of JPS57198677A publication Critical patent/JPS57198677A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2238Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)
JP8262681A 1981-05-30 1981-05-30 Optical semiconductor device Pending JPS57198677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8262681A JPS57198677A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8262681A JPS57198677A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198677A true JPS57198677A (en) 1982-12-06

Family

ID=13779651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8262681A Pending JPS57198677A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198677A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165189A (ja) * 1987-12-22 1989-06-29 Canon Inc 半導体レーザー
EP1309050A1 (en) * 2001-11-06 2003-05-07 Agilent Technologies, Inc. (a Delaware corporation) Laser device and method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165189A (ja) * 1987-12-22 1989-06-29 Canon Inc 半導体レーザー
EP1309050A1 (en) * 2001-11-06 2003-05-07 Agilent Technologies, Inc. (a Delaware corporation) Laser device and method therefor

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