JPS57198657A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57198657A JPS57198657A JP56084104A JP8410481A JPS57198657A JP S57198657 A JPS57198657 A JP S57198657A JP 56084104 A JP56084104 A JP 56084104A JP 8410481 A JP8410481 A JP 8410481A JP S57198657 A JPS57198657 A JP S57198657A
- Authority
- JP
- Japan
- Prior art keywords
- hfe
- transistor
- overall
- base
- previous stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002411 adverse Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000003116 impacting effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084104A JPS57198657A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084104A JPS57198657A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57198657A true JPS57198657A (en) | 1982-12-06 |
Family
ID=13821209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56084104A Pending JPS57198657A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57198657A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299271A (ja) * | 1987-05-29 | 1988-12-06 | Shindengen Electric Mfg Co Ltd | 複合トランジスタ |
| JPS63299272A (ja) * | 1987-05-29 | 1988-12-06 | Shindengen Electric Mfg Co Ltd | 複合トランジスタ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5493365A (en) * | 1977-12-30 | 1979-07-24 | Sanken Electric Co Ltd | Composite semiconductor |
-
1981
- 1981-06-01 JP JP56084104A patent/JPS57198657A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5493365A (en) * | 1977-12-30 | 1979-07-24 | Sanken Electric Co Ltd | Composite semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299271A (ja) * | 1987-05-29 | 1988-12-06 | Shindengen Electric Mfg Co Ltd | 複合トランジスタ |
| JPS63299272A (ja) * | 1987-05-29 | 1988-12-06 | Shindengen Electric Mfg Co Ltd | 複合トランジスタ |
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