JPS57196793A - Epitaxial growth method - Google Patents
Epitaxial growth methodInfo
- Publication number
- JPS57196793A JPS57196793A JP8230581A JP8230581A JPS57196793A JP S57196793 A JPS57196793 A JP S57196793A JP 8230581 A JP8230581 A JP 8230581A JP 8230581 A JP8230581 A JP 8230581A JP S57196793 A JPS57196793 A JP S57196793A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- substrate
- impurities
- sub
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000012808 vapor phase Substances 0.000 abstract 2
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8230581A JPS57196793A (en) | 1981-05-29 | 1981-05-29 | Epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8230581A JPS57196793A (en) | 1981-05-29 | 1981-05-29 | Epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196793A true JPS57196793A (en) | 1982-12-02 |
| JPS621360B2 JPS621360B2 (enExample) | 1987-01-13 |
Family
ID=13770835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8230581A Granted JPS57196793A (en) | 1981-05-29 | 1981-05-29 | Epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196793A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012724A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 化合物半導体の成長方法 |
-
1981
- 1981-05-29 JP JP8230581A patent/JPS57196793A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012724A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 化合物半導体の成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS621360B2 (enExample) | 1987-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5696834A (en) | Compound semiconductor epitaxial wafer and manufacture thereof | |
| JPS57176772A (en) | Semiconductor device and manufacture thereof | |
| JPS54589A (en) | Burying method of insulator | |
| JPS57196793A (en) | Epitaxial growth method | |
| JPS5654049A (en) | Semiconductor device | |
| JPS57196794A (en) | Epitaxial growth method | |
| JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
| JPS57159017A (en) | Manufacture of semiconductor single crystal film | |
| JPS57197834A (en) | Manufacture of insulated and isolated substrate | |
| JPS57192017A (en) | Epitaxial growing method | |
| JPS57196800A (en) | Silicon epitaxial growth method | |
| JPS5323559A (en) | Production of compound semiconductor | |
| JPS5721814A (en) | Manufacture of semiconductor device | |
| JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
| JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
| JPS53143163A (en) | Epitaxial growth method | |
| JPS5282087A (en) | Production of solar cell | |
| JPS53133367A (en) | Silicon vapor phase epitaxial growing method | |
| JPS54116882A (en) | Manufacture of semiconductor device | |
| JPS5591815A (en) | Silicon epitaxial growth | |
| JPS5243369A (en) | Flat etching method for silicon | |
| JPS5591118A (en) | Production of semiconductor device | |
| JPS57170539A (en) | Manufacture of semiconductor device | |
| JPS53108766A (en) | Vapor phase growth method of sos film | |
| JPS54102295A (en) | Epitaxial crowth method |