JPS57196571A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS57196571A JPS57196571A JP8172681A JP8172681A JPS57196571A JP S57196571 A JPS57196571 A JP S57196571A JP 8172681 A JP8172681 A JP 8172681A JP 8172681 A JP8172681 A JP 8172681A JP S57196571 A JPS57196571 A JP S57196571A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- layer
- base
- titled
- anode side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8172681A JPS57196571A (en) | 1981-05-28 | 1981-05-28 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8172681A JPS57196571A (en) | 1981-05-28 | 1981-05-28 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57196571A true JPS57196571A (en) | 1982-12-02 |
Family
ID=13754412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8172681A Pending JPS57196571A (en) | 1981-05-28 | 1981-05-28 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196571A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639974A (ja) * | 1986-06-30 | 1988-01-16 | Nec Corp | プレ−ナ型半導体装置 |
| JPH0193170A (ja) * | 1987-10-05 | 1989-04-12 | Toshiba Corp | 光トリガ型半導体装置 |
| FR2640082A1 (fr) * | 1988-12-07 | 1990-06-08 | Telemecanique | Dispositif semiconducteur de puissance symetrique et son procede de fabrication |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147478A (en) * | 1977-05-28 | 1978-12-22 | Nec Home Electronics Ltd | Production of planar type thyristor |
| JPS5624971A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5745277A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | High withstand voltage planar type thyristor |
-
1981
- 1981-05-28 JP JP8172681A patent/JPS57196571A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147478A (en) * | 1977-05-28 | 1978-12-22 | Nec Home Electronics Ltd | Production of planar type thyristor |
| JPS5624971A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5745277A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | High withstand voltage planar type thyristor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639974A (ja) * | 1986-06-30 | 1988-01-16 | Nec Corp | プレ−ナ型半導体装置 |
| JPH0193170A (ja) * | 1987-10-05 | 1989-04-12 | Toshiba Corp | 光トリガ型半導体装置 |
| FR2640082A1 (fr) * | 1988-12-07 | 1990-06-08 | Telemecanique | Dispositif semiconducteur de puissance symetrique et son procede de fabrication |
| US4963971A (en) * | 1988-12-07 | 1990-10-16 | Telemecanique | Symmetrical power semiconductor device and method of fabrication |
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