JPS57187941A - Manufacture of semiconductor substrate - Google Patents
Manufacture of semiconductor substrateInfo
- Publication number
- JPS57187941A JPS57187941A JP7251581A JP7251581A JPS57187941A JP S57187941 A JPS57187941 A JP S57187941A JP 7251581 A JP7251581 A JP 7251581A JP 7251581 A JP7251581 A JP 7251581A JP S57187941 A JPS57187941 A JP S57187941A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- back surface
- semiconductor substrate
- heat
- oxide films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 230000001939 inductive effect Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7251581A JPS57187941A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7251581A JPS57187941A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57187941A true JPS57187941A (en) | 1982-11-18 |
Family
ID=13491544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7251581A Pending JPS57187941A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187941A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208638A (ja) * | 1986-03-07 | 1987-09-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0529324A (ja) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | シリコンウエーハの製造方法 |
| JPH05121415A (ja) * | 1991-10-29 | 1993-05-18 | Shin Etsu Handotai Co Ltd | 半導体基板の製造方法 |
-
1981
- 1981-05-14 JP JP7251581A patent/JPS57187941A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208638A (ja) * | 1986-03-07 | 1987-09-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0469814B2 (ja) * | 1986-03-07 | 1992-11-09 | Tokyo Shibaura Electric Co | |
| JPH0529324A (ja) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | シリコンウエーハの製造方法 |
| JPH05121415A (ja) * | 1991-10-29 | 1993-05-18 | Shin Etsu Handotai Co Ltd | 半導体基板の製造方法 |
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