JPS5718340B2 - - Google Patents
Info
- Publication number
- JPS5718340B2 JPS5718340B2 JP826173A JP826173A JPS5718340B2 JP S5718340 B2 JPS5718340 B2 JP S5718340B2 JP 826173 A JP826173 A JP 826173A JP 826173 A JP826173 A JP 826173A JP S5718340 B2 JPS5718340 B2 JP S5718340B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Polymers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Surface Treatment Of Glass (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB235072A GB1414481A (en) | 1972-01-18 | 1972-01-18 | Methods of producing phosphosilicate glass patterns |
| GB2075972A GB1418666A (en) | 1972-05-04 | 1972-05-04 | Methods of producing phosphosilicate glass patterns |
| GB2076072A GB1427733A (en) | 1972-05-04 | 1972-05-04 | Apertured phosphosilicate glass coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4883110A JPS4883110A (https=) | 1973-11-06 |
| JPS5718340B2 true JPS5718340B2 (https=) | 1982-04-16 |
Family
ID=27254064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP826173A Expired JPS5718340B2 (https=) | 1972-01-18 | 1973-01-18 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3877980A (https=) |
| JP (1) | JPS5718340B2 (https=) |
| DE (1) | DE2302148C2 (https=) |
| FR (1) | FR2173949B1 (https=) |
| IT (1) | IT977622B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4041190A (en) * | 1971-06-29 | 1977-08-09 | Thomson-Csf | Method for producing a silica mask on a semiconductor substrate |
| GB1451623A (en) * | 1973-10-01 | 1976-10-06 | Mullard Ltd | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate |
| US4237208A (en) * | 1979-02-15 | 1980-12-02 | Rca Corporation | Silane electron beam resists |
| DE2943153A1 (de) * | 1979-10-25 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleiterbauelementen mit einer aus phosphorhaltigem siliziumdioxid bestehenden passivierungsschicht |
| JPS60100435A (ja) * | 1983-11-05 | 1985-06-04 | Mitsubishi Electric Corp | 半導体基板の塗布液状絶縁物質の選択硬化方法 |
| JP2639526B2 (ja) * | 1987-05-07 | 1997-08-13 | 東京応化工業株式会社 | シリカ系被膜の形成方法 |
| JP2752968B2 (ja) * | 1987-05-07 | 1998-05-18 | 東京応化工業株式会社 | シリカ系被膜の形成法 |
| DE3833931A1 (de) * | 1988-10-05 | 1990-04-12 | Texas Instruments Deutschland | Verfahren zum herstellen einer dotierten isolierschicht |
| US5198298A (en) * | 1989-10-24 | 1993-03-30 | Advanced Micro Devices, Inc. | Etch stop layer using polymers |
| US6652922B1 (en) * | 1995-06-15 | 2003-11-25 | Alliedsignal Inc. | Electron-beam processed films for microelectronics structures |
| US5609925A (en) * | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
| KR19990030660A (ko) * | 1997-10-02 | 1999-05-06 | 윤종용 | 전자빔을 이용한 반도체장치의 층간 절연막 형성방법 |
| KR20160136303A (ko) * | 2014-03-26 | 2016-11-29 | 도레이 카부시키가이샤 | 반도체 장치의 제조 방법 및 반도체 장치 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3055776A (en) * | 1960-12-12 | 1962-09-25 | Pacific Semiconductors Inc | Masking technique |
| FR2123652A5 (https=) * | 1970-02-19 | 1972-09-15 | Ibm | |
| US3760242A (en) * | 1972-03-06 | 1973-09-18 | Ibm | Coated semiconductor structures and methods of forming protective coverings on such structures |
-
1973
- 1973-01-17 IT IT67071/73A patent/IT977622B/it active
- 1973-01-17 DE DE2302148A patent/DE2302148C2/de not_active Expired
- 1973-01-17 US US324394A patent/US3877980A/en not_active Expired - Lifetime
- 1973-01-18 JP JP826173A patent/JPS5718340B2/ja not_active Expired
- 1973-01-18 FR FR7301693A patent/FR2173949B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2173949B1 (https=) | 1976-05-14 |
| IT977622B (it) | 1974-09-20 |
| FR2173949A1 (https=) | 1973-10-12 |
| DE2302148A1 (de) | 1973-07-19 |
| US3877980A (en) | 1975-04-15 |
| DE2302148C2 (de) | 1983-02-10 |
| JPS4883110A (https=) | 1973-11-06 |