JPS57183023A - Laser annealing - Google Patents

Laser annealing

Info

Publication number
JPS57183023A
JPS57183023A JP6733481A JP6733481A JPS57183023A JP S57183023 A JPS57183023 A JP S57183023A JP 6733481 A JP6733481 A JP 6733481A JP 6733481 A JP6733481 A JP 6733481A JP S57183023 A JPS57183023 A JP S57183023A
Authority
JP
Japan
Prior art keywords
annealing
substrate
spot
heating
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6733481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0116006B2 (enrdf_load_stackoverflow
Inventor
Ikuro Kobayashi
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6733481A priority Critical patent/JPS57183023A/ja
Publication of JPS57183023A publication Critical patent/JPS57183023A/ja
Publication of JPH0116006B2 publication Critical patent/JPH0116006B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP6733481A 1981-05-02 1981-05-02 Laser annealing Granted JPS57183023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6733481A JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6733481A JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Publications (2)

Publication Number Publication Date
JPS57183023A true JPS57183023A (en) 1982-11-11
JPH0116006B2 JPH0116006B2 (enrdf_load_stackoverflow) 1989-03-22

Family

ID=13342012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6733481A Granted JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Country Status (1)

Country Link
JP (1) JPS57183023A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
JPH0360015A (ja) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd レーザアニール装置
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置
JP2004289140A (ja) * 2003-03-03 2004-10-14 Semiconductor Energy Lab Co Ltd レーザ照射装置及びレーザ照射方法並びに半導体装置の作製方法。
JP2004297055A (ja) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法およびレーザ照射方法、並びにレーザ照射装置。
JP2005210129A (ja) * 2004-01-22 2005-08-04 Ultratech Inc 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2009032952A (ja) * 2007-07-27 2009-02-12 Sharp Corp レーザ照射装置、レーザ照射方法、結晶材料、および、機能素子
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2012231158A (ja) * 2003-09-29 2012-11-22 Ultratech Inc 低濃度ドープシリコン基板のレーザー熱アニール

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
JPH0360015A (ja) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd レーザアニール装置
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004289140A (ja) * 2003-03-03 2004-10-14 Semiconductor Energy Lab Co Ltd レーザ照射装置及びレーザ照射方法並びに半導体装置の作製方法。
JP2004297055A (ja) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法およびレーザ照射方法、並びにレーザ照射装置。
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP2012231158A (ja) * 2003-09-29 2012-11-22 Ultratech Inc 低濃度ドープシリコン基板のレーザー熱アニール
JP2005210129A (ja) * 2004-01-22 2005-08-04 Ultratech Inc 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2010109375A (ja) * 2004-01-22 2010-05-13 Ultratech Inc 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2009032952A (ja) * 2007-07-27 2009-02-12 Sharp Corp レーザ照射装置、レーザ照射方法、結晶材料、および、機能素子

Also Published As

Publication number Publication date
JPH0116006B2 (enrdf_load_stackoverflow) 1989-03-22

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