JPS57181492A - Control circuit for sense amplifier input voltage - Google Patents
Control circuit for sense amplifier input voltageInfo
- Publication number
- JPS57181492A JPS57181492A JP6521681A JP6521681A JPS57181492A JP S57181492 A JPS57181492 A JP S57181492A JP 6521681 A JP6521681 A JP 6521681A JP 6521681 A JP6521681 A JP 6521681A JP S57181492 A JPS57181492 A JP S57181492A
- Authority
- JP
- Japan
- Prior art keywords
- point
- voltage
- sense amplifier
- control circuit
- readout
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
Landscapes
- Read Only Memory (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To an input voltage control circuit suitable for a sense amplifier for an ROM enabling high speed readout less in voltage dependancy with a simple constitution, by feed-back controlling a voltage at a connecting point between a memory matrix and a load transistor. CONSTITUTION:A readout voltage at a coupling point P1 between a memory matrix 1 and a load use depletion type FETQ1 is given between a sense amplifier 2 and a point P1 and inputted to an input voltage control circuit 3 of FETsQ12-Q14 constitution. When the information (0) of a cell to be selected in a matrix 1 is read, the potential at the point P1 is increased to be a sense level or more. Then, the FETQ12 turns on and the FETQ14 in ground connection via the FETQ13 turns on, the impedance of the FETQ14 is lowered to decrease the potential at the point P1 with feedback control. This is the same when the information is 1, and the voltage at the point P1 is controlled to a specified value and the deterioration in the transient characteristics at inverse information readout is not caused, allowing to achieve a suitable input controller for a sense amplifier for an ROM enabling high speed readout with less in voltage dependancy and simple constitution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56065216A JPS6048837B2 (en) | 1981-05-01 | 1981-05-01 | Sense amplifier input voltage control circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56065216A JPS6048837B2 (en) | 1981-05-01 | 1981-05-01 | Sense amplifier input voltage control circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57181492A true JPS57181492A (en) | 1982-11-08 |
JPS6048837B2 JPS6048837B2 (en) | 1985-10-29 |
Family
ID=13280488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56065216A Expired JPS6048837B2 (en) | 1981-05-01 | 1981-05-01 | Sense amplifier input voltage control circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6048837B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5914194A (en) * | 1982-07-13 | 1984-01-25 | Nec Corp | Storage device |
-
1981
- 1981-05-01 JP JP56065216A patent/JPS6048837B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5914194A (en) * | 1982-07-13 | 1984-01-25 | Nec Corp | Storage device |
JPS6231433B2 (en) * | 1982-07-13 | 1987-07-08 | Nippon Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6048837B2 (en) | 1985-10-29 |
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