JPS57181176A - High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor - Google Patents

High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Info

Publication number
JPS57181176A
JPS57181176A JP56066689A JP6668981A JPS57181176A JP S57181176 A JPS57181176 A JP S57181176A JP 56066689 A JP56066689 A JP 56066689A JP 6668981 A JP6668981 A JP 6668981A JP S57181176 A JPS57181176 A JP S57181176A
Authority
JP
Japan
Prior art keywords
approx
high voltage
thin film
amorphous
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56066689A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0340515B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56066689A priority Critical patent/JPS57181176A/ja
Priority to US06/266,064 priority patent/US4388482A/en
Publication of JPS57181176A publication Critical patent/JPS57181176A/ja
Priority to JP2308025A priority patent/JPH03188682A/ja
Publication of JPH0340515B2 publication Critical patent/JPH0340515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP56066689A 1981-01-29 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor Granted JPS57181176A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56066689A JPS57181176A (en) 1981-04-30 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
US06/266,064 US4388482A (en) 1981-01-29 1981-05-19 High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
JP2308025A JPH03188682A (ja) 1981-04-30 1990-11-13 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066689A JPS57181176A (en) 1981-04-30 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2308025A Division JPH03188682A (ja) 1981-04-30 1990-11-13 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JP3164044A Division JPH0722633A (ja) 1991-02-15 1991-02-15 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合半導体装置

Publications (2)

Publication Number Publication Date
JPS57181176A true JPS57181176A (en) 1982-11-08
JPH0340515B2 JPH0340515B2 (enrdf_load_stackoverflow) 1991-06-19

Family

ID=13323147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066689A Granted JPS57181176A (en) 1981-01-29 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Country Status (1)

Country Link
JP (1) JPS57181176A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868046U (ja) * 1981-11-02 1983-05-09 工業技術院長 光起電力素子
JPS60262470A (ja) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS61232685A (ja) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池およびその製造方法
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JPH0722633A (ja) * 1991-02-15 1995-01-24 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合半導体装置
DE4408791B4 (de) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
US7747033B2 (en) 2005-04-01 2010-06-29 Kabushiki Kaisha Audio-Technica Acoustic tube and directional microphone
WO2011001842A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868046U (ja) * 1981-11-02 1983-05-09 工業技術院長 光起電力素子
JPS60262470A (ja) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS61232685A (ja) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池およびその製造方法
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JPH0722633A (ja) * 1991-02-15 1995-01-24 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合半導体装置
DE4408791B4 (de) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
US7747033B2 (en) 2005-04-01 2010-06-29 Kabushiki Kaisha Audio-Technica Acoustic tube and directional microphone
WO2011001842A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9496428B2 (en) 2009-07-03 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JPH0340515B2 (enrdf_load_stackoverflow) 1991-06-19

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