JPS57178397A - Semiconductor optical waveguide element - Google Patents
Semiconductor optical waveguide elementInfo
- Publication number
- JPS57178397A JPS57178397A JP6489781A JP6489781A JPS57178397A JP S57178397 A JPS57178397 A JP S57178397A JP 6489781 A JP6489781 A JP 6489781A JP 6489781 A JP6489781 A JP 6489781A JP S57178397 A JPS57178397 A JP S57178397A
- Authority
- JP
- Japan
- Prior art keywords
- carrier concentration
- substrates
- layer
- layers
- high carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6489781A JPS57178397A (en) | 1981-04-27 | 1981-04-27 | Semiconductor optical waveguide element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6489781A JPS57178397A (en) | 1981-04-27 | 1981-04-27 | Semiconductor optical waveguide element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57178397A true JPS57178397A (en) | 1982-11-02 |
Family
ID=13271320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6489781A Pending JPS57178397A (en) | 1981-04-27 | 1981-04-27 | Semiconductor optical waveguide element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57178397A (ja) |
-
1981
- 1981-04-27 JP JP6489781A patent/JPS57178397A/ja active Pending
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