JPS57177576A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57177576A
JPS57177576A JP6143681A JP6143681A JPS57177576A JP S57177576 A JPS57177576 A JP S57177576A JP 6143681 A JP6143681 A JP 6143681A JP 6143681 A JP6143681 A JP 6143681A JP S57177576 A JPS57177576 A JP S57177576A
Authority
JP
Japan
Prior art keywords
region
type
substrate
regions
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6143681A
Other languages
Japanese (ja)
Inventor
Kaoru Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP6143681A priority Critical patent/JPS57177576A/en
Publication of JPS57177576A publication Critical patent/JPS57177576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device

Abstract

PURPOSE:To enhance input impedence with mono power supply for the control of the power consumption in switching transition, by making the switching control system of a hook gate control type mono junction diode a gate control type. CONSTITUTION:A P type emitter region Q10 is diffusion-formed on the center of an N type semiconductor substrate Q8 with an N<+> type base region Q9 and P type hook region Q11 provided on the both sides thereof. Next, an N<+> type collector region Q12 is diffusion-formed within the region Q11 with an N<+> type output region Q13 provided on the substrate Q8 on the opposite side of the region 11 to the region 10 via a region Q15 constituted of the substrate Q8. Thus, a P channel MOS type transistor T1 is constituted of the regions Q10 and Q11 in the substrate Q8 with an electrode 6 provided on the substrate Q8 placed between the regions Q10 and Q11 via a thin insulating film. Besides, electrodes 7-10 are respectively ohmic-connected on regions Q9, Q10, Q12, Q13.
JP6143681A 1981-04-24 1981-04-24 Semiconductor device Pending JPS57177576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6143681A JPS57177576A (en) 1981-04-24 1981-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6143681A JPS57177576A (en) 1981-04-24 1981-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57177576A true JPS57177576A (en) 1982-11-01

Family

ID=13171009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6143681A Pending JPS57177576A (en) 1981-04-24 1981-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57177576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563970A (en) * 1982-06-04 1986-01-14 Walker John G Sail with retractable air directing element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563970A (en) * 1982-06-04 1986-01-14 Walker John G Sail with retractable air directing element

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