JPS57177575A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57177575A JPS57177575A JP6143581A JP6143581A JPS57177575A JP S57177575 A JPS57177575 A JP S57177575A JP 6143581 A JP6143581 A JP 6143581A JP 6143581 A JP6143581 A JP 6143581A JP S57177575 A JPS57177575 A JP S57177575A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- hook
- source
- impressed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enhance input impedence for the avoidance of the increase of power consumption at a signal line in switching transition, by making the switching control system of a hook gate control type diode a gate control type. CONSTITUTION:A P type emitter region Q9 is diffusion-formed on the center of an N type semiconductor substrate Q7 with an N<+> type base region Q8 and P type hook region Q10 provided on the both sides thereof. Next, an N<+> type collector region Q11 is diffusion-formed within the region 10 to constiturte a P channel MOS transitor with the emitter region Q9 as the source and the hook region Q10 as the drain. Thereafter, a gate electrode 5 positioned between the regions Q9 and Q10 is formed via a thin insulating film with ohmic electrodes 6-8 respectively amounted on the regions Q8, Q9 and Q10. The positive pole of a power source E4 constituted in such a manner with the region Q11 as a standard source is impressed on the region Q8 and another same positive pole is impressed on the region Q9 via a resistor 3 and switch SW3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6143581A JPS57177575A (en) | 1981-04-24 | 1981-04-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6143581A JPS57177575A (en) | 1981-04-24 | 1981-04-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57177575A true JPS57177575A (en) | 1982-11-01 |
Family
ID=13170981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6143581A Pending JPS57177575A (en) | 1981-04-24 | 1981-04-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57177575A (en) |
-
1981
- 1981-04-24 JP JP6143581A patent/JPS57177575A/en active Pending
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