JPS57177560A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS57177560A
JPS57177560A JP6214081A JP6214081A JPS57177560A JP S57177560 A JPS57177560 A JP S57177560A JP 6214081 A JP6214081 A JP 6214081A JP 6214081 A JP6214081 A JP 6214081A JP S57177560 A JPS57177560 A JP S57177560A
Authority
JP
Japan
Prior art keywords
film
sio2
si3n4
laminated
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6214081A
Other languages
English (en)
Other versions
JPS6318868B2 (ja
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6214081A priority Critical patent/JPS57177560A/ja
Publication of JPS57177560A publication Critical patent/JPS57177560A/ja
Publication of JPS6318868B2 publication Critical patent/JPS6318868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
JP6214081A 1981-04-24 1981-04-24 Semiconductor memory Granted JPS57177560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6214081A JPS57177560A (en) 1981-04-24 1981-04-24 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6214081A JPS57177560A (en) 1981-04-24 1981-04-24 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57177560A true JPS57177560A (en) 1982-11-01
JPS6318868B2 JPS6318868B2 (ja) 1988-04-20

Family

ID=13191484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6214081A Granted JPS57177560A (en) 1981-04-24 1981-04-24 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57177560A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210733A (ja) * 1999-12-22 2001-08-03 Hyundai Electronics Ind Co Ltd マルチレベルフラッシュｅｅｐｒｏｍセル及びその製造方法
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210733A (ja) * 1999-12-22 2001-08-03 Hyundai Electronics Ind Co Ltd マルチレベルフラッシュｅｅｐｒｏｍセル及びその製造方法
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS6318868B2 (ja) 1988-04-20

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