JPS57176722A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS57176722A
JPS57176722A JP6170781A JP6170781A JPS57176722A JP S57176722 A JPS57176722 A JP S57176722A JP 6170781 A JP6170781 A JP 6170781A JP 6170781 A JP6170781 A JP 6170781A JP S57176722 A JPS57176722 A JP S57176722A
Authority
JP
Japan
Prior art keywords
electron beam
wafer
electrode
facing surface
downward
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6170781A
Other languages
Japanese (ja)
Inventor
Hiroshi Yasuda
Yoshinobu Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6170781A priority Critical patent/JPS57176722A/en
Publication of JPS57176722A publication Critical patent/JPS57176722A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To accurately emit an electron beam by roughening the surface of an electrode facing a path of the beam, and forming upward and downward surfaces on a specimen, thereby storing the beam reflected from the specimen on the downward facing surface. CONSTITUTION:An upward facing surface 14 directed toward a source of an electron beam EB and a downward facing surface 15 directed toward a wafer 11 are formed on the opposing surfaces of an electrode 13, and both are acutely crossed. When the beam EB is emitted on the wafer 11, a resist material 12 is evaporated, organic materials are scattered to collide with the surface 15 of the electrode 13 and are stored on the surface 15 but are not stored on the surface 14. Since the beam is not affected by the downward facing surface storing the organic materials, the beam can be accurately emitted on the wafer.
JP6170781A 1981-04-23 1981-04-23 Electron beam exposure device Pending JPS57176722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6170781A JPS57176722A (en) 1981-04-23 1981-04-23 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6170781A JPS57176722A (en) 1981-04-23 1981-04-23 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS57176722A true JPS57176722A (en) 1982-10-30

Family

ID=13178966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6170781A Pending JPS57176722A (en) 1981-04-23 1981-04-23 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS57176722A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253319A (en) * 2011-05-10 2012-12-20 Sumitomo Electric Ind Ltd Reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253319A (en) * 2011-05-10 2012-12-20 Sumitomo Electric Ind Ltd Reactor

Similar Documents

Publication Publication Date Title
ES460405A1 (en) Sputtering device and method
FR2415876A1 (en) X-RAY TUBE, ESPECIALLY FOR TOMODENSITOMETER
JPS57176722A (en) Electron beam exposure device
ATE136192T1 (en) SOURCE FOR GENERATING A FAST ATOMIC BEAM
JPS5258373A (en) Inspection for defects of pattern forming film
JPS56164531A (en) Manufacture of semiconductor
JPS5673970A (en) Light source for image reader
JPS5447472A (en) Picture display unit
DE69020675D1 (en) Electron beam generating device with a surface discharge plasma cathode.
JPS5684853A (en) Face structure of member located close to electron beam path
KR920010717A (en) Shadow Mask for Cathode Ray Tube
JPS57106114A (en) Ion beam sputtering apparatus
JPS5684856A (en) Electron beam focusing device
KR890008901A (en) Display
KR910019097A (en) Ion Source Device
JPS51142277A (en) Device for electron-beam exposure
JPS56145639A (en) Electron gun
JPS5776834A (en) Method of electron beam exposure
JPS6427151A (en) Measuring device
JPS5795047A (en) Beam index tube
JPS6471142A (en) Measurement of potential of semiconductor device
JPS5633824A (en) Method and device for electron beam exposing
JPS5321952A (en) Measurement of electron beam diameter
JPS57130357A (en) Electronic optical bodytube
JPS5418679A (en) Electron impact type ion source device