JPS57176034A - Method for microprocessing radiation sensitive resist - Google Patents

Method for microprocessing radiation sensitive resist

Info

Publication number
JPS57176034A
JPS57176034A JP5972881A JP5972881A JPS57176034A JP S57176034 A JPS57176034 A JP S57176034A JP 5972881 A JP5972881 A JP 5972881A JP 5972881 A JP5972881 A JP 5972881A JP S57176034 A JPS57176034 A JP S57176034A
Authority
JP
Japan
Prior art keywords
polymer
radiation sensitive
sensitive resist
repeating units
microprocessing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5972881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260691B2 (enrdf_load_stackoverflow
Inventor
Kimio Shibayama
Kingo Itaya
Teruo Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP5972881A priority Critical patent/JPS57176034A/ja
Priority to US06/289,281 priority patent/US4367281A/en
Publication of JPS57176034A publication Critical patent/JPS57176034A/ja
Publication of JPS6260691B2 publication Critical patent/JPS6260691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP5972881A 1981-01-12 1981-04-22 Method for microprocessing radiation sensitive resist Granted JPS57176034A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5972881A JPS57176034A (en) 1981-04-22 1981-04-22 Method for microprocessing radiation sensitive resist
US06/289,281 US4367281A (en) 1981-01-12 1981-08-03 Fine fabrication process using radiation sensitive resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5972881A JPS57176034A (en) 1981-04-22 1981-04-22 Method for microprocessing radiation sensitive resist

Publications (2)

Publication Number Publication Date
JPS57176034A true JPS57176034A (en) 1982-10-29
JPS6260691B2 JPS6260691B2 (enrdf_load_stackoverflow) 1987-12-17

Family

ID=13121543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5972881A Granted JPS57176034A (en) 1981-01-12 1981-04-22 Method for microprocessing radiation sensitive resist

Country Status (1)

Country Link
JP (1) JPS57176034A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6260691B2 (enrdf_load_stackoverflow) 1987-12-17

Similar Documents

Publication Publication Date Title
CA1041347A (en) Terpolymers containing sulfur dioxide for electron beam positive resists
MY131673A (en) Partially polymerized resins
EP0780732A3 (en) Polymer composition and resist material
KR950019896A (ko) 방사선 감응성 수지 조성물
JPS5635130A (en) Resist material and method for forming resist pattern
JPS57176034A (en) Method for microprocessing radiation sensitive resist
JPS5759920A (en) Photocrosslinkable resin composition
JPS5653114A (en) Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
EP0399542A3 (en) Water developable photosensitive resin composition
JPS5518673A (en) Ionized radiation sensitive negative type resist
US4474869A (en) Polyvinylpyridine radiation resists
EP0051320B1 (en) Radiation-sensitive negative resist
US4367281A (en) Fine fabrication process using radiation sensitive resist
US4504631A (en) Photoresist material
EP0334906B1 (en) Silicon-containing negative resist material, and process for its use in patterning substrates
JPS5786830A (en) Pattern forming material
JPS5456375A (en) Positive type resist for dry etching
JPS53134085A (en) Photopolymerizable composition
JPS5518473A (en) Ionic radiation sensitive negative type resist
DE3414104A1 (de) Styrol-polymerisate und deren verwendung als resistmaterialien
JPS51131559A (en) Aqueous composition of vinyl copolymer with good stability and process for preparing it
JPH02170809A (ja) ネガ型レジスト
JPS5786831A (en) Pattern forming material
JPS57185037A (en) Negative resist for forming micropattern
JPS5672433A (en) Pattern forming method